SCTH35N65G2V-7AG
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STMicroelectronics SCTH35N65G2V-7AG

Manufacturer No:
SCTH35N65G2V-7AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
SICFET N-CH 650V 45A H2PAK-7
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The SCTH35N65G2V-7AG is an automotive-grade silicon carbide (SiC) Power MOSFET developed by STMicroelectronics using their advanced and innovative 2nd generation SiC MOSFET technology. This device is designed to offer high performance, reliability, and efficiency in various power management applications. It is particularly suited for use in demanding environments such as electric vehicles and industrial power systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Current Rating (Id)45 A
On-Resistance (Rds(on))55 mΩ (typ., TJ = 25 °C)
PackageH2PAK-7
QualificationAEC-Q101 qualified

Key Features

  • Very fast and robust intrinsic body diode
  • Low capacitance
  • High efficiency and reliability
  • AEC-Q101 qualified for automotive applications
  • Advanced 2nd generation SiC MOSFET technology

Applications

  • Switching mode power supplies
  • Electric vehicle (EV) chargers
  • Industrial power systems
  • Automotive power management systems

Q & A

  1. What is the voltage rating of the SCTH35N65G2V-7AG? The voltage rating is 650 V.
  2. What is the current rating of the SCTH35N65G2V-7AG? The current rating is 45 A.
  3. What is the typical on-resistance of the SCTH35N65G2V-7AG at 25 °C? The typical on-resistance is 55 mΩ.
  4. In what package is the SCTH35N65G2V-7AG available? It is available in an H2PAK-7 package.
  5. Is the SCTH35N65G2V-7AG qualified for automotive use? Yes, it is AEC-Q101 qualified.
  6. What are some key features of the SCTH35N65G2V-7AG? It has a very fast and robust intrinsic body diode, low capacitance, and is made with advanced 2nd generation SiC MOSFET technology.
  7. What are some common applications for the SCTH35N65G2V-7AG? Common applications include switching mode power supplies, EV chargers, industrial power systems, and automotive power management systems.
  8. Why is silicon carbide used in this MOSFET? Silicon carbide is used for its high efficiency, reliability, and performance in high-power applications.
  9. Where can I find detailed specifications for the SCTH35N65G2V-7AG? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website.
  10. Is the SCTH35N65G2V-7AG suitable for high-temperature environments? Yes, it is designed to operate reliably in demanding and high-temperature environments.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V, 20V
Rds On (Max) @ Id, Vgs:67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 20 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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