BUL743
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STMicroelectronics BUL743

Manufacturer No:
BUL743
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 500V 12A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUL743 is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics. This device is designed using the diffused collector in planar technology with an enhanced high voltage structure, providing intrinsic ruggedness and the ability to withstand high collector current levels during breakdown conditions. The BUL743 is particularly suited for applications requiring high voltage capability and fast switching speeds.

Key Specifications

ParameterValueUnit
Collector-emitter voltage (VBE = 0)1200V
Collector-emitter voltage (IB = 0)500V
Emitter-base breakdown voltage15 - 24V
Collector current12A
Collector peak current (tp < 5 ms)24A
Base current6A
Base peak current (tp < 5 ms)12A
Total dissipation at Tc = 25 °C100W
Max. operating junction temperature150°C
Storage temperature-65 to 150°C
Thermal resistance junction - case1.25°C/W
Thermal resistance junction - ambient62.5°C/W

Key Features

  • Low spread of dynamic parameters for reliable operation.
  • High voltage capability up to 1200 V.
  • Very high switching speed.
  • Intrinsic ruggedness to withstand high collector current levels during breakdown conditions.
  • Minimum lot-to-lot spread for consistent performance.

Applications

  • Electronic ballast for fluorescent lighting up to 256 W (8 x 32 W).
  • Switch mode power supplies.

Q & A

  1. What is the maximum collector-emitter voltage of the BUL743? The maximum collector-emitter voltage (VBE = 0) is 1200 V.
  2. What is the maximum collector current of the BUL743? The maximum collector current is 12 A.
  3. What is the maximum operating junction temperature of the BUL743? The maximum operating junction temperature is 150 °C.
  4. What are the typical applications of the BUL743? The BUL743 is typically used in electronic ballast for fluorescent lighting and switch mode power supplies.
  5. What is the thermal resistance junction - case of the BUL743? The thermal resistance junction - case is 1.25 °C/W.
  6. What is the package type of the BUL743? The BUL743 is packaged in a TO-220 tube.
  7. What is the emitter-base breakdown voltage of the BUL743? The emitter-base breakdown voltage ranges from 15 to 24 V.
  8. What is the total dissipation at Tc = 25 °C for the BUL743? The total dissipation at Tc = 25 °C is 100 W.
  9. What are the key features of the BUL743? Key features include low spread of dynamic parameters, high voltage capability, very high switching speed, and intrinsic ruggedness.
  10. What is the storage temperature range for the BUL743? The storage temperature range is -65 to 150 °C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):12 A
Voltage - Collector Emitter Breakdown (Max):500 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 2.5A, 10A
Current - Collector Cutoff (Max):250µA
DC Current Gain (hFE) (Min) @ Ic, Vce:24 @ 2A, 3V
Power - Max:100 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number BUL743 BUL741
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 12 A 2.5 A
Voltage - Collector Emitter Breakdown (Max) 500 V 400 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2.5A, 10A 1.5V @ 600mA, 2A
Current - Collector Cutoff (Max) 250µA 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce 24 @ 2A, 3V 25 @ 450mA, 3V
Power - Max 100 W 60 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220

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