CPH6443-P-TL-H
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Sanyo CPH6443-P-TL-H

Manufacturer No:
CPH6443-P-TL-H
Manufacturer:
Sanyo
Package:
Bulk
Description:
N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CPH6443-P-TL-H is a single N-channel power MOSFET produced by Sanyo, now part of ON Semiconductor. This device is fabricated using trench technology, which minimizes gate charge and reduces on-resistance. It is designed for applications requiring low gate charge driving and low on-resistance. The MOSFET is packaged in a surface mount 6-CPH configuration, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Symbol Value Unit
Drain to Source Voltage VDSS 35 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID 6 A
Drain Current (Pulse) IDP 24 A
Power Dissipation PD 1.6 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −55 to +150 °C
On-Resistance (RDS(on)) at VGS=10V RDS(on)1 28-37 mΩ mΩ
On-Resistance (RDS(on)) at VGS=4.5V RDS(on)2 43-61 mΩ mΩ
On-Resistance (RDS(on)) at VGS=4V RDS(on)3 52-73 mΩ mΩ
Junction to Ambient Thermal Resistance RθJA 78.1 °C/W °C/W

Key Features

  • Low On-Resistance: The CPH6443-P-TL-H features low on-resistance, making it efficient for power management applications.
  • 4V Drive Capability: This MOSFET can be driven with a gate voltage as low as 4V, enhancing its usability in various circuits.
  • ESD Diode-Protected Gate: The gate is protected by an ESD diode, providing enhanced reliability against electrostatic discharge.
  • Pb-Free, Halogen Free, and RoHS Compliance: The device is free from lead, halogen, and complies with RoHS standards, making it environmentally friendly.

Applications

  • DC/DC Converters: The low on-resistance and low gate charge make this MOSFET suitable for DC/DC converter applications.
  • Current Balance Switch for Backlight: It is also used in current balance switches for backlight systems due to its efficient switching characteristics.

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the CPH6443-P-TL-H?

    The maximum drain to source voltage (VDSS) is 35V.

  2. What is the maximum drain current (ID) for the CPH6443-P-TL-H?

    The maximum drain current (ID) is 6A.

  3. What is the typical on-resistance (RDS(on)) at VGS=10V?

    The typical on-resistance (RDS(on)) at VGS=10V is 28-37 mΩ.

  4. Is the CPH6443-P-TL-H RoHS compliant?

    Yes, the CPH6443-P-TL-H is Pb-Free, Halogen Free, and RoHS compliant.

  5. What are the typical applications of the CPH6443-P-TL-H?

    Typical applications include DC/DC converters and current balance switches for backlight systems.

  6. What is the junction to ambient thermal resistance (RθJA) of the CPH6443-P-TL-H?

    The junction to ambient thermal resistance (RθJA) is 78.1 °C/W.

  7. What is the gate threshold voltage (VGS(th)) of the CPH6443-P-TL-H?

    The gate threshold voltage (VGS(th)) is 1.2-2.6V.

  8. Does the CPH6443-P-TL-H have ESD protection?

    Yes, the gate is protected by an ESD diode.

  9. What is the maximum pulse drain current (IDP) for the CPH6443-P-TL-H?

    The maximum pulse drain current (IDP) is 24A for PW ≤ 10μs, duty cycle ≤ 1%.

  10. What is the storage temperature range for the CPH6443-P-TL-H?

    The storage temperature range is −55 to +150 °C.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:6A (Tj)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-CPH
Package / Case:SOT-23-6 Thin, TSOT-23-6
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