Overview
The FCPF260N65FL1 is an N-Channel SuperFET® II FRFET® MOSFET produced by Fairchild Semiconductor, now part of ON Semiconductor. This high-voltage MOSFET is designed for applications requiring high power handling and efficiency. It features a drain to source voltage (VDSS) of 650 V, a continuous drain current (ID) of 15 A at 25°C, and a typical on-resistance (RDS(on)) of 260 mΩ. The device is known for its ultra-low gate charge and low effective output capacitance, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 650 | V |
| Gate to Source Voltage (VGSS) - DC | ±20 | V |
| Gate to Source Voltage (VGSS) - AC (f > 1 Hz) | ±30 | V |
| Continuous Drain Current (ID) at 25°C | 15 | A |
| Continuous Drain Current (ID) at 100°C | 9.5 | A |
| Pulsed Drain Current (IDM) | 45 | A |
| Single Pulsed Avalanche Energy (EAS) | 293 | mJ |
| Avalanche Current (IAS) | 3 | A |
| Repetitive Avalanche Energy (EAR) | 0.36 | mJ |
| MOSFET dv/dt | 100 | V/ns |
| Peak Diode Recovery dv/dt | 50 | V/ns |
| Power Dissipation (PD) at 25°C | 36 | W |
| Derate Above 25°C | 0.29 | W/°C |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Maximum Lead Temperature for Soldering | 300 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 3.5 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 62.5 | °C/W |
Key Features
- High voltage rating of 650 V at TJ = 25°C and 700 V at TJ = 150°C
- Typical on-resistance (RDS(on)) of 260 mΩ
- Ultra-low gate charge (Qg) of 46 nC (typical)
- Low effective output capacitance (Coss(eff.)) of 223 pF (typical)
- 100% avalanche tested
- RoHS compliant
Applications
The FCPF260N65FL1 is suitable for various high-power applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Automotive systems, such as electric vehicle charging and battery management
- Industrial power systems, including inverters and switch-mode power supplies
- Renewable energy systems, such as solar and wind power inverters
Q & A
- What is the maximum drain to source voltage of the FCPF260N65FL1?
The maximum drain to source voltage (VDSS) is 650 V at TJ = 25°C and 700 V at TJ = 150°C.
- What is the continuous drain current rating of the FCPF260N65FL1 at 25°C?
The continuous drain current (ID) is 15 A at 25°C.
- What is the typical on-resistance of the FCPF260N65FL1?
The typical on-resistance (RDS(on)) is 260 mΩ.
- Is the FCPF260N65FL1 RoHS compliant?
- What is the maximum power dissipation of the FCPF260N65FL1 at 25°C?
The maximum power dissipation (PD) is 36 W at 25°C.
- What is the thermal resistance from junction to case (RθJC) of the FCPF260N65FL1?
The thermal resistance from junction to case (RθJC) is 3.5 °C/W.
- What are the operating and storage temperature ranges for the FCPF260N65FL1?
The operating and storage temperature range is -55 to +150 °C.
- What is the maximum lead temperature for soldering the FCPF260N65FL1?
The maximum lead temperature for soldering is 300 °C.
- What are some typical applications for the FCPF260N65FL1?
- What is the single pulsed avalanche energy rating of the FCPF260N65FL1?
AS) is 293 mJ. - What is the peak diode recovery dv/dt of the FCPF260N65FL1?
