STTFS010N10MCL
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onsemi STTFS010N10MCL

Manufacturer No:
STTFS010N10MCL
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
PTNG 100V LL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTFS010N10MCL is an N-Channel, shielded gate MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET features advanced trench technology, which enhances its electrical characteristics and reliability. Although this product is no longer in production and will not be restocked once current inventory is depleted, it remains a viable option for existing designs and inventory management.

Key Specifications

ParameterRatingsUnit
VDS (Drain to Source Voltage)100V
ID (Continuous Drain Current at TA = 25°C)10.7 AA
ID (Continuous Drain Current at TC = 25°C)50 AA
RDS(ON) (On-Resistance at VGS = 10 V, ID = 10 A)1.5 mΩ
VGS(th) (Threshold Voltage at VDS = 10 V, ID = 250 μA)2.0 - 4.0 VV
PD (Power Dissipation at TA = 25°C)150 WW

Key Features

  • Shielded Gate Technology: Enhances the device's electrical performance and reliability by reducing the impact of parasitic capacitances and inductances.
  • Low On-Resistance (RDS(ON)): 1.5 mΩ at VGS = 10 V, ID = 10 A, which minimizes power losses and improves efficiency.
  • High Current Handling: Continuous drain current of 10.7 A at TA = 25°C and 50 A at TC = 25°C, making it suitable for high-power applications.
  • High Voltage Rating: Drain to source voltage rating of 100 V, allowing for use in a variety of high-voltage applications.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and other high-power conversion applications.
  • Motor Control: Can be used in motor control circuits due to its high current handling and low on-resistance.
  • Industrial Automation: Applicable in various industrial automation systems requiring high reliability and performance.
  • Automotive Systems: Can be used in automotive systems that require high power and efficiency.

Q & A

  1. What is the continuous drain current rating of the STTFS010N10MCL at TA = 25°C?
    The continuous drain current rating is 10.7 A at TA = 25°C.
  2. What is the on-resistance (RDS(ON)) of the STTFS010N10MCL?
    The on-resistance is 1.5 mΩ at VGS = 10 V, ID = 10 A.
  3. What is the maximum drain to source voltage (VDS) rating?
    The maximum drain to source voltage rating is 100 V.
  4. Is the STTFS010N10MCL still in production?
    No, the STTFS010N10MCL is no longer in production and will not be restocked once current inventory is depleted.
  5. What are some typical applications of the STTFS010N10MCL?
    Typical applications include power supplies, motor control, industrial automation, and automotive systems.
  6. What is the threshold voltage (VGS(th)) range of the STTFS010N10MCL?
    The threshold voltage range is 2.0 - 4.0 V at VDS = 10 V, ID = 250 μA.
  7. What is the power dissipation rating of the STTFS010N10MCL at TA = 25°C?
    The power dissipation rating is 150 W at TA = 25°C.
  8. What technology is used in the STTFS010N10MCL to enhance its performance?
    The device uses shielded gate technology to enhance its electrical performance and reliability.
  9. What is the maximum continuous drain current at TC = 25°C?
    The maximum continuous drain current at TC = 25°C is 50 A.
  10. Where can I find detailed specifications for the STTFS010N10MCL?
    Detailed specifications can be found in the datasheet available on the onsemi website, Digi-Key, and Mouser Electronics.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:10.7A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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