SBCW66GLT1G
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onsemi SBCW66GLT1G

Manufacturer No:
SBCW66GLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.8A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBCW66GLT1G is a general-purpose NPN silicon transistor manufactured by onsemi. This transistor is designed for a wide range of applications, including automotive and other sectors that require unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. The device is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 Vdc
Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current - Continuous IC 800 mAdc
Collector Current - Pulsed IC 1200 mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
DC Current Gain (IC = 100 mA, VCE = 10 Vdc) hFE 50 - 110 -
Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) 0.7 Vdc
Base-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VBE(sat) 2.0 Vdc

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • High collector current of up to 800 mA continuous and 1200 mA pulsed.
  • High collector-emitter voltage of 45 Vdc and collector-base voltage of 75 Vdc.
  • Low collector-emitter saturation voltage and base-emitter saturation voltage.
  • Fast switching times with turn-on time of 100 ns and turn-off time of 400 ns.
  • Compact SOT-23 package, ideal for space-constrained designs.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • General-purpose amplification: Can be used in a wide range of amplification circuits due to its high current gain and low saturation voltages.
  • Switching circuits: Fast switching times make it ideal for high-frequency switching applications.
  • Consumer electronics: Used in various consumer electronic devices requiring reliable and efficient transistor performance.
  • Industrial control systems: Suitable for industrial control and automation systems due to its robust specifications.

Q & A

  1. What is the maximum collector-emitter voltage of the SBCW66GLT1G transistor?

    The maximum collector-emitter voltage (VCEO) is 45 Vdc.

  2. What is the continuous collector current rating of the SBCW66GLT1G?

    The continuous collector current (IC) is 800 mA.

  3. Is the SBCW66GLT1G transistor RoHS compliant?

    Yes, the SBCW66GLT1G is Pb-free, halogen-free, and RoHS compliant.

  4. What is the typical DC current gain (hFE) of the SBCW66GLT1G?

    The typical DC current gain (hFE) ranges from 50 to 110 at IC = 100 mA and VCE = 10 Vdc.

  5. What is the turn-on time of the SBCW66GLT1G transistor?

    The turn-on time (ton) is typically 100 ns.

  6. What is the package type of the SBCW66GLT1G transistor?

    The transistor is packaged in a SOT-23 (TO-236) case.

  7. Is the SBCW66GLT1G suitable for high-frequency applications?

    Yes, it has a current-gain bandwidth product (fT) of 100 MHz, making it suitable for high-frequency applications.

  8. What are the junction and storage temperature ranges for the SBCW66GLT1G?

    The junction and storage temperature range is from -55°C to +150°C.

  9. What is the base-emitter saturation voltage of the SBCW66GLT1G?

    The base-emitter saturation voltage (VBE(sat)) is typically 2.0 Vdc.

  10. Can the SBCW66GLT1G be used in automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):20nA
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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