Overview
The SBCW66GLT1G is a general-purpose NPN silicon transistor manufactured by onsemi. This transistor is designed for a wide range of applications, including automotive and other sectors that require unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. The device is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | Vdc |
| Collector-Base Voltage | VCBO | 75 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current - Continuous | IC | 800 | mAdc |
| Collector Current - Pulsed | IC | 1200 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 100 mA, VCE = 10 Vdc) | hFE | 50 - 110 | - |
| Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | 0.7 | Vdc |
| Base-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VBE(sat) | 2.0 | Vdc |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- High collector current of up to 800 mA continuous and 1200 mA pulsed.
- High collector-emitter voltage of 45 Vdc and collector-base voltage of 75 Vdc.
- Low collector-emitter saturation voltage and base-emitter saturation voltage.
- Fast switching times with turn-on time of 100 ns and turn-off time of 400 ns.
- Compact SOT-23 package, ideal for space-constrained designs.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- General-purpose amplification: Can be used in a wide range of amplification circuits due to its high current gain and low saturation voltages.
- Switching circuits: Fast switching times make it ideal for high-frequency switching applications.
- Consumer electronics: Used in various consumer electronic devices requiring reliable and efficient transistor performance.
- Industrial control systems: Suitable for industrial control and automation systems due to its robust specifications.
Q & A
- What is the maximum collector-emitter voltage of the SBCW66GLT1G transistor?
The maximum collector-emitter voltage (VCEO) is 45 Vdc.
- What is the continuous collector current rating of the SBCW66GLT1G?
The continuous collector current (IC) is 800 mA.
- Is the SBCW66GLT1G transistor RoHS compliant?
Yes, the SBCW66GLT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the typical DC current gain (hFE) of the SBCW66GLT1G?
The typical DC current gain (hFE) ranges from 50 to 110 at IC = 100 mA and VCE = 10 Vdc.
- What is the turn-on time of the SBCW66GLT1G transistor?
The turn-on time (ton) is typically 100 ns.
- What is the package type of the SBCW66GLT1G transistor?
The transistor is packaged in a SOT-23 (TO-236) case.
- Is the SBCW66GLT1G suitable for high-frequency applications?
Yes, it has a current-gain bandwidth product (fT) of 100 MHz, making it suitable for high-frequency applications.
- What are the junction and storage temperature ranges for the SBCW66GLT1G?
The junction and storage temperature range is from -55°C to +150°C.
- What is the base-emitter saturation voltage of the SBCW66GLT1G?
The base-emitter saturation voltage (VBE(sat)) is typically 2.0 Vdc.
- Can the SBCW66GLT1G be used in automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
