SBC846BWT1G-M02
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onsemi SBC846BWT1G-M02

Manufacturer No:
SBC846BWT1G-M02
Manufacturer:
onsemi
Package:
Bulk
Description:
SBC846 - TRANS BJTS NPN 65V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBC846BWT1G-M02 is a bipolar junction transistor (BJT) produced by onsemi. It is an NPN transistor designed for general-purpose applications. This transistor is housed in a surface-mount SC-70 (SOT-323) package, making it suitable for compact and efficient circuit designs. The SBC846BWT1G-M02 is known for its high reliability and performance in various electronic circuits.

Key Specifications

Parameter Value Parameter Value
Product Status Active Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V Power - Max 310 mW
Frequency - Transition 300MHz Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Package/Case SC-70, SOT-323

Key Features

  • High Collector-Emitter Breakdown Voltage: Up to 65 V, making it suitable for a wide range of applications.
  • Low Vce Saturation: 600mV at 5mA and 100mA, ensuring efficient operation.
  • High DC Current Gain: Minimum of 200 at 2mA and 5V, providing reliable amplification.
  • Compact Package: Surface-mount SC-70 (SOT-323) package for space-saving designs.
  • High Transition Frequency: Up to 300MHz, suitable for high-frequency applications.
  • RoHS Compliant: Ensures environmental compliance and sustainability.

Applications

  • General-Purpose Amplification: Suitable for various amplification tasks in electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its high transition frequency.
  • Audio and Signal Processing: Applicable in audio amplifiers and signal processing circuits.
  • Automotive and Industrial Electronics: Used in automotive and industrial control systems due to its robust specifications.

Q & A

  1. Q: What is the maximum collector current of the SBC846BWT1G-M02?

    A: The maximum collector current is 100 mA.

  2. Q: What is the collector-emitter breakdown voltage of the SBC846BWT1G-M02?

    A: The collector-emitter breakdown voltage is up to 65 V.

  3. Q: What is the DC current gain (hFE) of the SBC846BWT1G-M02?

    A: The minimum DC current gain is 200 at 2mA and 5V.

  4. Q: What is the operating temperature range of the SBC846BWT1G-M02?

    A: The operating temperature range is up to 150°C (TJ).

  5. Q: Is the SBC846BWT1G-M02 RoHS compliant?

    A: Yes, the SBC846BWT1G-M02 is RoHS compliant.

  6. Q: What is the package type of the SBC846BWT1G-M02?

    A: The package type is SC-70 (SOT-323), which is a surface-mount package.

  7. Q: How can I obtain the datasheet for the SBC846BWT1G-M02?

    A: You can obtain the datasheet from the onsemi website or through authorized distributors like Ovaga.

  8. Q: What is the warranty period for the SBC846BWT1G-M02 purchased from Ovaga?

    A: Ovaga offers a 1-year warranty on the SBC846BWT1G-M02.

  9. Q: How can I ensure the authenticity of the SBC846BWT1G-M02 from onsemi?

    A: Ensure you purchase from authorized distributors like Ovaga, which rigorously tests and verifies the credentials of original Onsemi manufacturers and authorized agents.

  10. Q: What are the shipping options for the SBC846BWT1G-M02?

    A: Shipping options include DHL, FedEx, UPS, TNT, EMS, and Registered Air Mail, with typical delivery times of 2-5 days.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70 (SOT323)
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