PZTA96ST1G
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onsemi PZTA96ST1G

Manufacturer No:
PZTA96ST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 450V 0.5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PZTA96ST1G is a high-voltage PNP silicon transistor manufactured by onsemi. This device is designed to operate in high-voltage applications and is packaged in the SOT-223 (TO-261) case. It is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems. The transistor is known for its robust electrical and thermal characteristics, ensuring reliable performance under various operating conditions.

Key Specifications

RatingSymbolValueUnit
Collector-Emitter VoltageVCEO-450Vdc
Collector-Base VoltageVCBO-450Vdc
Emitter-Base VoltageVEBO-5.0Vdc
Collector CurrentIC-500mAdc
Total Power Dissipation (up to TA = 25°C)PD1.5W
Storage Temperature RangeTstg-65 to +150°C
Junction TemperatureTJ150°C
Thermal Resistance, Junction-to-AmbientRθJA83.3°C/W
DC Current Gain (IC = -10 mA, VCE = -10 V)hFE50 to 150-
Saturation Voltage (IC = -20 mA, IB = -2.0 mA)VCE(sat)-0.6Vdc
Saturation Voltage (IC = -20 mA, IB = -2.0 mA)VBE(sat)-1.0Vdc

Key Features

  • Pb-free, halogen-free, and RoHS compliant
  • High collector-emitter voltage (VCEO) of -450 Vdc
  • High collector-base voltage (VCBO) of -450 Vdc
  • Low emitter-base voltage (VEBO) of -5.0 Vdc
  • Collector current (IC) of -500 mA
  • Total power dissipation of 1.5 W up to TA = 25°C
  • Wide storage temperature range of -65 to +150°C
  • Junction temperature of 150°C
  • Thermal resistance, junction-to-ambient (RθJA) of 83.3 °C/W
  • DC current gain (hFE) ranging from 50 to 150

Applications

The PZTA96ST1G high-voltage transistor is suitable for various high-voltage applications, including but not limited to:

  • Power amplifiers and switches
  • High-voltage power supplies
  • Audio amplifiers requiring high voltage handling
  • Industrial control systems
  • Automotive electronics where high reliability is crucial

Q & A

  1. What is the collector-emitter voltage rating of the PZTA96ST1G transistor?
    The collector-emitter voltage (VCEO) rating is -450 Vdc.
  2. What is the maximum collector current for the PZTA96ST1G?
    The maximum collector current (IC) is -500 mA.
  3. Is the PZTA96ST1G RoHS compliant?
    Yes, the PZTA96ST1G is Pb-free, halogen-free, and RoHS compliant.
  4. What is the thermal resistance, junction-to-ambient (RθJA) of the PZTA96ST1G?
    The thermal resistance, junction-to-ambient (RθJA), is 83.3 °C/W.
  5. What is the DC current gain (hFE) range for the PZTA96ST1G?
    The DC current gain (hFE) ranges from 50 to 150.
  6. What is the storage temperature range for the PZTA96ST1G?
    The storage temperature range is -65 to +150°C.
  7. What is the junction temperature limit for the PZTA96ST1G?
    The junction temperature limit is 150°C.
  8. In what package is the PZTA96ST1G available?
    The PZTA96ST1G is available in the SOT-223 (TO-261) package.
  9. What are some typical applications for the PZTA96ST1G?
    Typical applications include power amplifiers, high-voltage power supplies, audio amplifiers, industrial control systems, and automotive electronics.
  10. Where can I find detailed specifications for the PZTA96ST1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through authorized distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):450 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 2mA, 20mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 10V
Power - Max:1.5 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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