Overview
The PZT751T1G is a High Current PNP Bipolar Transistor designed by onsemi for use in industrial and consumer applications. It is housed in the SOT-223 package, which is suitable for medium power surface mount applications. This transistor is known for its high current handling capability and robust thermal management features.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | Vdc |
| Collector-Base Voltage | VCBO | -80 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current | IC | -2.0 | Adc |
| Total Power Dissipation @ TA = 25°C | PD | 0.8 | W |
| Storage Temperature Range | Tstg | -65 to 150 | °C |
| Junction Temperature | TJ | 150 | °C |
| Thermal Resistance from Junction-to-Ambient in Free Air | RJA | 156 | °C/W |
| Maximum Temperature for Soldering Purposes | TL | 260 | °C |
| Current Gain (hFE) @ IC = -1.0 Adc, VCE = -2.0 Vdc | hFE | 40-75 | - |
| Collector-Emitter Saturation Voltage @ IC = -2.0 Adc, IB = -200 mAdc | VCE(sat) | -0.5 | Vdc |
| Base-Emitter Saturation Voltage @ IC = -1.0 Adc, IB = -100 mAdc | VBE(sat) | -1.2 | Vdc |
| Current-Gain-Bandwidth @ IC = -50 mAdc, VCE = -5.0 Vdc, f = 100 MHz | fT | 75 | MHz |
Key Features
- High Current capability up to 2.0 Amps.
- SOT-223 package, suitable for medium power surface mount applications.
- The SOT-223 package can be soldered using wave or reflow methods.
- Ensures level mounting, resulting in improved thermal conduction and allows visual inspection of soldered joints.
- Formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
- NPN Complement is PZT651T1.
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant.
Applications
The PZT751T1G is versatile and can be used in a variety of industrial and consumer applications. These include but are not limited to:
- Power switching and amplification in industrial control systems.
- Automotive systems requiring high reliability and compliance with automotive standards (AEC-Q101 Qualified).
- Consumer electronics that require robust and efficient power management.
- General-purpose amplification and switching in electronic circuits.
Q & A
- What is the maximum collector current of the PZT751T1G?
The maximum collector current is -2.0 Adc. - What is the package type of the PZT751T1G?
The package type is SOT-223 (TO-261). - Is the PZT751T1G RoHS compliant?
Yes, the PZT751T1G is Pb-Free, Halogen Free/BFR Free and RoHS Compliant. - What is the maximum junction temperature for the PZT751T1G?
The maximum junction temperature is 150°C. - Can the SOT-223 package be soldered using wave or reflow methods?
Yes, the SOT-223 package can be soldered using both wave and reflow methods. - What is the current gain (hFE) of the PZT751T1G?
The current gain (hFE) ranges from 40 to 75 at IC = -1.0 Adc, VCE = -2.0 Vdc. - Is the PZT751T1G suitable for automotive applications?
Yes, it is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive applications. - What is the collector-emitter saturation voltage of the PZT751T1G?
The collector-emitter saturation voltage is -0.5 Vdc at IC = -2.0 Adc, IB = -200 mAdc. - What is the base-emitter saturation voltage of the PZT751T1G?
The base-emitter saturation voltage is -1.2 Vdc at IC = -1.0 Adc, IB = -100 mAdc. - What is the current-gain-bandwidth of the PZT751T1G?
The current-gain-bandwidth is 75 MHz at IC = -50 mAdc, VCE = -5.0 Vdc, f = 100 MHz.
