Overview
The PZT751T1 is a PNP silicon planar epitaxial transistor manufactured by onsemi. This bipolar junction transistor (BJT) is designed for a variety of applications requiring high performance and reliability. It features a surface mount SOT-223 (TO-261) package, making it suitable for modern electronic designs where space efficiency is crucial.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Base Voltage (Vcb) | 60 V |
| Collector-Emitter Voltage (Vce) | 60 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 2 A |
| Power Dissipation (Pd) | 800 mW |
| Gain Bandwidth Product (fT) | 75 MHz |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 500 mV |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range (Tstg) | -65 to 150 °C |
Key Features
- PNP bipolar junction transistor with high current capability of up to 2 A.
- High voltage handling with a collector-base voltage of 60 V.
- Low collector-emitter saturation voltage of 500 mV, ensuring efficient operation.
- High gain bandwidth product of 75 MHz, suitable for high-frequency applications.
- Surface mount SOT-223 (TO-261) package for compact designs.
- RoHS compliant, ensuring environmental sustainability.
Applications
The PZT751T1 is versatile and can be used in a variety of applications, including:
- Audio amplifiers and audio equipment.
- Power supplies and voltage regulators.
- Switching circuits and logic gates.
- Automotive and industrial control systems.
- High-frequency amplifiers and oscillators.
Q & A
- What is the collector current rating of the PZT751T1?
The collector current rating of the PZT751T1 is 2 A. - What is the maximum junction temperature for the PZT751T1?
The maximum junction temperature for the PZT751T1 is 150 °C. - What is the gain bandwidth product (fT) of the PZT751T1?
The gain bandwidth product (fT) of the PZT751T1 is 75 MHz. - What type of package does the PZT751T1 use?
The PZT751T1 uses a surface mount SOT-223 (TO-261) package. - Is the PZT751T1 RoHS compliant?
Yes, the PZT751T1 is RoHS compliant. - What is the collector-emitter saturation voltage (Vce(sat)) of the PZT751T1?
The collector-emitter saturation voltage (Vce(sat)) of the PZT751T1 is 500 mV. - What is the storage temperature range for the PZT751T1?
The storage temperature range for the PZT751T1 is -65 to 150 °C. - What are some common applications for the PZT751T1?
The PZT751T1 can be used in audio amplifiers, power supplies, switching circuits, automotive and industrial control systems, and high-frequency amplifiers. - What is the emitter-base voltage (Vebo) rating of the PZT751T1?
The emitter-base voltage (Vebo) rating of the PZT751T1 is 5 V. - What is the power dissipation (Pd) of the PZT751T1?
The power dissipation (Pd) of the PZT751T1 is 800 mW.
