Overview
The SPZT751T1G is a PNP Silicon Planar Epitaxial Transistor designed and manufactured by onsemi. This transistor is housed in the SOT-223 package, which is optimized for medium power surface mount applications. It is suitable for use in both industrial and consumer electronics due to its robust design and performance characteristics.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | Vdc |
| Collector-Base Voltage | VCBO | -80 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current | IC | -2.0 | Adc |
| Total Power Dissipation @ TA = 25°C | PD | 0.8 | W |
| Storage Temperature Range | Tstg | -65 to 150 | °C |
| Junction Temperature | TJ | 150 | °C |
| Thermal Resistance from Junction-to-Ambient in Free Air | RJA | 156 | °C/W |
| Maximum Temperature for Soldering Purposes | TL | 260 | °C |
Key Features
- High Current Capability: The SPZT751T1G is designed to handle high current levels, making it suitable for a variety of power applications.
- SOT-223 Package: The transistor is housed in the SOT-223 package, which allows for medium power surface mount applications and ensures level mounting, improved thermal conduction, and visual inspection of soldered joints.
- Automotive and Industrial Compliance: The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Environmental Compliance: The transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- NPN Complement: The NPN complement of this transistor is the PZT651T1G.
Applications
- Industrial and Consumer Electronics: Suitable for use in a wide range of industrial and consumer electronic applications due to its robust design and performance characteristics.
- Power Amplification: Can be used in power amplification circuits where high current handling is required.
- Switching Applications: Ideal for switching tasks in various electronic circuits.
- Automotive Systems: AEC-Q101 qualified, making it suitable for use in automotive systems.
Q & A
- What is the maximum collector-emitter voltage for the SPZT751T1G transistor?
The maximum collector-emitter voltage (VCEO) is -60 Vdc.
- What is the storage temperature range for this transistor?
The storage temperature range (Tstg) is -65°C to 150°C.
- Is the SPZT751T1G transistor RoHS compliant?
- What is the thermal resistance from junction-to-ambient in free air for this transistor?
The thermal resistance from junction-to-ambient in free air (RJA) is 156 °C/W.
- What is the maximum current handling capability of the SPZT751T1G transistor?
The maximum collector current (IC) is -2.0 Adc.
- What package type is the SPZT751T1G transistor housed in?
The transistor is housed in the SOT-223 package.
- Is the SPZT751T1G transistor suitable for automotive applications?
- What is the NPN complement of the SPZT751T1G transistor?
The NPN complement is the PZT651T1G.
- How does the SOT-223 package benefit the transistor's performance?
The SOT-223 package ensures level mounting, improved thermal conduction, and allows visual inspection of soldered joints. It also absorbs thermal stress during soldering, eliminating the possibility of damage to the die.
- What is the maximum temperature for soldering purposes for this transistor?
The maximum temperature for soldering purposes (TL) is 260°C.
