PZT651T1G
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onsemi PZT651T1G

Manufacturer No:
PZT651T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 2A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PZT651T1G is a NPN Bipolar Transistor designed and manufactured by onsemi. This transistor is specifically tailored for use in industrial and consumer applications. It is housed in a SOT-223 package, which is optimized for medium power surface-mount applications. The package design ensures level mounting, enhancing thermal conduction and allowing for visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, preventing potential damage to the die.

Key Specifications

ParameterValue
Transistor PolarityNPN
Collector Emitter Voltage Max60 V
Continuous Collector Current2 A
Power Dissipation800 mW
Transistor Case StyleSOT-223
No. of Pins4 Pins
Transistor MountingSurface Mount
Transition Frequency75 MHz
DC Current Gain hFE Min75 hFE
Operating Temperature Max150°C
QualificationAEC-Q101

Key Features

  • Halogen-free
  • AEC-Q101 qualified and PPAP capable
  • Can be soldered using wave or reflow
  • Formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
  • RoHS compliant

Applications

The PZT651T1G is suitable for various applications, including:

  • Industrial
  • Power Management
  • Automotive

Q & A

  1. What is the transistor polarity of the PZT651T1G?
    The transistor polarity of the PZT651T1G is NPN.
  2. What is the maximum collector-emitter voltage of the PZT651T1G?
    The maximum collector-emitter voltage is 60 V.
  3. What is the continuous collector current of the PZT651T1G?
    The continuous collector current is 2 A.
  4. What is the power dissipation of the PZT651T1G?
    The power dissipation is 800 mW.
  5. What is the transistor case style of the PZT651T1G?
    The transistor case style is SOT-223.
  6. How many pins does the PZT651T1G have?
    The PZT651T1G has 4 pins.
  7. What is the transition frequency of the PZT651T1G?
    The transition frequency is 75 MHz.
  8. What is the minimum DC current gain (hFE) of the PZT651T1G?
    The minimum DC current gain (hFE) is 75 hFE.
  9. What is the maximum operating temperature of the PZT651T1G?
    The maximum operating temperature is 150°C.
  10. Is the PZT651T1G AEC-Q101 qualified?
    Yes, the PZT651T1G is AEC-Q101 qualified.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:75 @ 1A, 2V
Power - Max:800 mW
Frequency - Transition:75MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Same Series
SPZT651T1G
SPZT651T1G
TRANS NPN 60V 2A SOT223

Similar Products

Part Number PZT651T1G PZT751T1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A, 2V 75 @ 1A, 2V
Power - Max 800 mW 800 mW
Frequency - Transition 75MHz 75MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)

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