NVTFS014P04M8LTAG
  • Share:

onsemi NVTFS014P04M8LTAG

Manufacturer No:
NVTFS014P04M8LTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 11.3A/49A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS014P04M8LTAG is a P-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low conduction and driver losses. With its compact 3.3 x 3.3 mm 8-WDFN package, it is ideal for space-constrained designs. The MOSFET features a drain-source voltage (Vds) of 40 V, a continuous drain current (Id) of 11.3 A at ambient temperature and 49 A at case temperature, and a power dissipation of 3.2 W at ambient temperature and 61 W at case temperature.

Key Specifications

ParameterValue
Channel TypeP-Channel
Drain-Source Voltage (Vds)40 V
Continuous Drain Current (Id) at Ta11.3 A
Continuous Drain Current (Id) at Tc49 A
Power Dissipation at Ta3.2 W
Power Dissipation at Tc61 W
Package Type8-WDFN (3.3 x 3.3 mm)
RDS(on)Low RDS(on) to minimize conduction losses
CapacitanceLow capacitance to minimize driver losses

Key Features

  • Small footprint (3.3 x 3.3 mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses

Applications

The NVTFS014P04M8LTAG is suitable for a variety of high-performance applications, including but not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control systems
  • High-frequency switching applications

Q & A

  1. What is the drain-source voltage rating of the NVTFS014P04M8LTAG?
    The drain-source voltage (Vds) rating is 40 V.
  2. What is the continuous drain current at ambient temperature?
    The continuous drain current (Id) at ambient temperature is 11.3 A.
  3. What is the continuous drain current at case temperature?
    The continuous drain current (Id) at case temperature is 49 A.
  4. What is the power dissipation at ambient temperature?
    The power dissipation at ambient temperature is 3.2 W.
  5. What is the power dissipation at case temperature?
    The power dissipation at case temperature is 61 W.
  6. What is the package type of the NVTFS014P04M8LTAG?
    The package type is 8-WDFN (3.3 x 3.3 mm).
  7. What are the key features of the NVTFS014P04M8LTAG?
    The key features include a small footprint, low RDS(on), and low capacitance.
  8. Where can I find detailed specifications for the NVTFS014P04M8LTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. What are some typical applications for the NVTFS014P04M8LTAG?
    Typical applications include power management systems, DC-DC converters, motor control systems, and high-frequency switching applications.
  10. Is the NVTFS014P04M8LTAG suitable for high-frequency switching?
    Yes, it is suitable for high-frequency switching due to its low capacitance and low RDS(on).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:11.3A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.4V @ 420µA
Gate Charge (Qg) (Max) @ Vgs:26.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1734 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 61W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$1.08
284

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NVTFS014P04M8LTAG NVTFWS014P04M8LTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Ta), 49A (Tc) 11.3A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V 13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 420µA 2.4V @ 420µA
Gate Charge (Qg) (Max) @ Vgs 26.5 nC @ 10 V 26.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1734 pF @ 20 V 1734 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 61W (Tc) 3.2W (Ta), 61W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5