NVTFS014P04M8LTAG
  • Share:

onsemi NVTFS014P04M8LTAG

Manufacturer No:
NVTFS014P04M8LTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 11.3A/49A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS014P04M8LTAG is a P-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low conduction and driver losses. With its compact 3.3 x 3.3 mm 8-WDFN package, it is ideal for space-constrained designs. The MOSFET features a drain-source voltage (Vds) of 40 V, a continuous drain current (Id) of 11.3 A at ambient temperature and 49 A at case temperature, and a power dissipation of 3.2 W at ambient temperature and 61 W at case temperature.

Key Specifications

ParameterValue
Channel TypeP-Channel
Drain-Source Voltage (Vds)40 V
Continuous Drain Current (Id) at Ta11.3 A
Continuous Drain Current (Id) at Tc49 A
Power Dissipation at Ta3.2 W
Power Dissipation at Tc61 W
Package Type8-WDFN (3.3 x 3.3 mm)
RDS(on)Low RDS(on) to minimize conduction losses
CapacitanceLow capacitance to minimize driver losses

Key Features

  • Small footprint (3.3 x 3.3 mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses

Applications

The NVTFS014P04M8LTAG is suitable for a variety of high-performance applications, including but not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control systems
  • High-frequency switching applications

Q & A

  1. What is the drain-source voltage rating of the NVTFS014P04M8LTAG?
    The drain-source voltage (Vds) rating is 40 V.
  2. What is the continuous drain current at ambient temperature?
    The continuous drain current (Id) at ambient temperature is 11.3 A.
  3. What is the continuous drain current at case temperature?
    The continuous drain current (Id) at case temperature is 49 A.
  4. What is the power dissipation at ambient temperature?
    The power dissipation at ambient temperature is 3.2 W.
  5. What is the power dissipation at case temperature?
    The power dissipation at case temperature is 61 W.
  6. What is the package type of the NVTFS014P04M8LTAG?
    The package type is 8-WDFN (3.3 x 3.3 mm).
  7. What are the key features of the NVTFS014P04M8LTAG?
    The key features include a small footprint, low RDS(on), and low capacitance.
  8. Where can I find detailed specifications for the NVTFS014P04M8LTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. What are some typical applications for the NVTFS014P04M8LTAG?
    Typical applications include power management systems, DC-DC converters, motor control systems, and high-frequency switching applications.
  10. Is the NVTFS014P04M8LTAG suitable for high-frequency switching?
    Yes, it is suitable for high-frequency switching due to its low capacitance and low RDS(on).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:11.3A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.4V @ 420µA
Gate Charge (Qg) (Max) @ Vgs:26.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1734 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 61W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$1.08
284

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NVTFS014P04M8LTAG NVTFWS014P04M8LTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Ta), 49A (Tc) 11.3A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V 13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 420µA 2.4V @ 420µA
Gate Charge (Qg) (Max) @ Vgs 26.5 nC @ 10 V 26.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1734 pF @ 20 V 1734 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 61W (Tc) 3.2W (Ta), 61W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN