NVTFS014P04M8LTAG
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onsemi NVTFS014P04M8LTAG

Manufacturer No:
NVTFS014P04M8LTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 11.3A/49A 8WDFN
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NVTFS014P04M8LTAG is a P-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low conduction and driver losses. With its compact 3.3 x 3.3 mm 8-WDFN package, it is ideal for space-constrained designs. The MOSFET features a drain-source voltage (Vds) of 40 V, a continuous drain current (Id) of 11.3 A at ambient temperature and 49 A at case temperature, and a power dissipation of 3.2 W at ambient temperature and 61 W at case temperature.

Key Specifications

ParameterValue
Channel TypeP-Channel
Drain-Source Voltage (Vds)40 V
Continuous Drain Current (Id) at Ta11.3 A
Continuous Drain Current (Id) at Tc49 A
Power Dissipation at Ta3.2 W
Power Dissipation at Tc61 W
Package Type8-WDFN (3.3 x 3.3 mm)
RDS(on)Low RDS(on) to minimize conduction losses
CapacitanceLow capacitance to minimize driver losses

Key Features

  • Small footprint (3.3 x 3.3 mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses

Applications

The NVTFS014P04M8LTAG is suitable for a variety of high-performance applications, including but not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control systems
  • High-frequency switching applications

Q & A

  1. What is the drain-source voltage rating of the NVTFS014P04M8LTAG?
    The drain-source voltage (Vds) rating is 40 V.
  2. What is the continuous drain current at ambient temperature?
    The continuous drain current (Id) at ambient temperature is 11.3 A.
  3. What is the continuous drain current at case temperature?
    The continuous drain current (Id) at case temperature is 49 A.
  4. What is the power dissipation at ambient temperature?
    The power dissipation at ambient temperature is 3.2 W.
  5. What is the power dissipation at case temperature?
    The power dissipation at case temperature is 61 W.
  6. What is the package type of the NVTFS014P04M8LTAG?
    The package type is 8-WDFN (3.3 x 3.3 mm).
  7. What are the key features of the NVTFS014P04M8LTAG?
    The key features include a small footprint, low RDS(on), and low capacitance.
  8. Where can I find detailed specifications for the NVTFS014P04M8LTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. What are some typical applications for the NVTFS014P04M8LTAG?
    Typical applications include power management systems, DC-DC converters, motor control systems, and high-frequency switching applications.
  10. Is the NVTFS014P04M8LTAG suitable for high-frequency switching?
    Yes, it is suitable for high-frequency switching due to its low capacitance and low RDS(on).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:11.3A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.4V @ 420µA
Gate Charge (Qg) (Max) @ Vgs:26.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1734 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 61W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NVTFS014P04M8LTAG NVTFWS014P04M8LTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Ta), 49A (Tc) 11.3A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.8mOhm @ 15A, 10V 13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 420µA 2.4V @ 420µA
Gate Charge (Qg) (Max) @ Vgs 26.5 nC @ 10 V 26.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1734 pF @ 20 V 1734 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 61W (Tc) 3.2W (Ta), 61W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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