Overview
The NTUD3169CZT5G is a high-performance, dual N/P-channel MOSFET produced by ON Semiconductor. This device is designed to offer complementary MOSFET functionality in an ultra-small SOT-963 package, measuring 1.0 x 1.0 mm. It is optimized for power management in ultra-portable equipment and load switching applications. The MOSFET features a low on-resistance (Rds(on)) and a thin profile, making it ideal for use in extremely thin environments such as portable electronics.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 20 | V |
| Gate-to-Source Voltage | VGS | ±8 | V |
| Continuous Drain Current (N-Channel) | ID | 220 mA (TA = 25°C), 200 mA (TA = 85°C) | mA |
| Continuous Drain Current (P-Channel) | ID | -200 mA | mA |
| On Resistance (N-Channel) | Rds(on) | 1.5 Ω @ VGS = 4.5 V | Ω |
| On Resistance (P-Channel) | Rds(on) | 4.5 Ω @ VGS = -4.5 V | Ω |
| Maximum Power Dissipation | PD | 200 mW | mW |
| Maximum Operating Temperature | TJ | 150 °C | °C |
| Minimum Operating Temperature | TJ | -55 °C | °C |
| Package Type | SOT-963 | ||
| Mounting Type | Surface Mount |
Key Features
- Complementary MOSFET device with both N and P channels in a single package.
- Ultra-small SOT-963 package (1.0 x 1.0 mm) with an ultra-thin profile (< 0.5 mm) suitable for extremely thin environments.
- Low on-resistance (Rds(on)) for efficient power handling.
- 1.5 V gate voltage rating for low control signal applications.
- Pb-free device, compliant with RoHS standards.
- Internal ESD protection for the N-channel.
- Optimized for load switching and power management in ultra-portable equipment.
Applications
- Power management in ultra-portable equipment such as laptops, tablets, and smartphones.
- Load switching applications requiring low control signal and high load currents.
- Automotive and industrial applications for efficient power switching and control.
Q & A
- Q: What is the package type of the NTUD3169CZT5G MOSFET?
A: The NTUD3169CZT5G is packaged in a SOT-963 surface mount package.
- Q: What are the maximum drain-to-source voltages for the N and P channels?
A: The maximum drain-to-source voltage (VDSS) for both N and P channels is 20 V.
- Q: What is the continuous drain current rating for the N-channel at 25°C?
A: The continuous drain current (ID) for the N-channel at 25°C is 220 mA.
- Q: What is the on-resistance (Rds(on)) for the N-channel at VGS = 4.5 V?
A: The on-resistance (Rds(on)) for the N-channel at VGS = 4.5 V is 1.5 Ω.
- Q: Is the NTUD3169CZT5G MOSFET Pb-free?
A: Yes, the NTUD3169CZT5G is a Pb-free device, compliant with RoHS standards.
- Q: What are the typical applications of the NTUD3169CZT5G MOSFET?
A: The NTUD3169CZT5G is typically used in power management for ultra-portable equipment, load switching, and in automotive and industrial applications.
- Q: What is the maximum operating temperature for the NTUD3169CZT5G?
A: The maximum operating temperature (TJ) for the NTUD3169CZT5G is 150 °C.
- Q: Does the NTUD3169CZT5G have internal ESD protection?
A: Yes, the N-channel of the NTUD3169CZT5G has internal ESD protection.
- Q: What is the gate voltage rating for the NTUD3169CZT5G?
A: The gate voltage rating (VGS) for the NTUD3169CZT5G is ±8 V.
- Q: How can I ensure the authenticity of the NTUD3169CZT5G from ON Semiconductor?
A: Ensure you purchase from authorized distributors or directly from ON Semiconductor to guarantee authenticity.
- Q: Where can I find detailed information about the NTUD3169CZT5G, such as application notes and factory information?
A: Detailed information can be found on the ON Semiconductor website, or through authorized distributors like Mouser, Digi-Key, and RS Components.
