BSS84AKV,115
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Nexperia USA Inc. BSS84AKV,115

Manufacturer No:
BSS84AKV,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 50V 170MA SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BSS84AKV,115 is a dual P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is part of Nexperia's TrenchMOS™ series and is designed for high-performance applications. It is packaged in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained designs. The BSS84AKV,115 is AEC-Q101 qualified, ensuring its reliability and suitability for automotive and other demanding applications.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Package / Case SOT666
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 170mA
Rds On (Max) @ Id, Vgs 7.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 25V
Power - Max 500mW
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate

Key Features

  • Logic-level compatible, making it easy to interface with standard logic signals.
  • Very fast switching times, suitable for high-speed applications.
  • Trench MOSFET technology for low on-resistance and high efficiency.
  • ESD protection up to 1 kV, enhancing reliability in harsh environments.
  • Compact SOT666 package, ideal for space-constrained designs.
  • AEC-Q101 qualified, ensuring automotive reliability and suitability for demanding applications.
  • High operating temperature range of -55°C to 150°C, making it suitable for a wide range of environments.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust performance.
  • Power management systems: Used in power management circuits for its high efficiency and low on-resistance.
  • High-speed line drivers: Ideal for high-speed switching applications.
  • Relay drivers: Used in relay driver circuits for its fast switching and low on-resistance.
  • High-side load switches: Suitable for load switching applications requiring high reliability and efficiency.

Q & A

  1. Q: What is the BSS84AKV,115?

    The BSS84AKV,115 is a dual P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc.

  2. Q: What package type does the BSS84AKV,115 use?

    The BSS84AKV,115 is packaged in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package.

  3. Q: What is the operating temperature range of the BSS84AKV,115?

    The operating temperature range is -55°C to 150°C (TJ).

  4. Q: What is the maximum drain to source voltage (Vdss) of the BSS84AKV,115?

    The maximum drain to source voltage (Vdss) is 50V.

  5. Q: What is the continuous drain current (Id) at 25°C?

    The continuous drain current (Id) at 25°C is 170mA.

  6. Q: What is the maximum on-resistance (Rds On) at 100mA and 10V Vgs?

    The maximum on-resistance (Rds On) at 100mA and 10V Vgs is 7.5 Ohm.

  7. Q: Is the BSS84AKV,115 AEC-Q101 qualified?
  8. Q: What are some common applications of the BSS84AKV,115?
  9. Q: Does the BSS84AKV,115 have ESD protection?
  10. Q: Is the BSS84AKV,115 RoHS compliant?

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):50V
Current - Continuous Drain (Id) @ 25°C:170mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:36pF @ 25V
Power - Max:500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
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Same Series
BSS84AKVL
BSS84AKVL
MOSFET P-CH 50V 180MA TO236AB

Similar Products

Part Number BSS84AKV,115 BSS84AKS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Not For New Designs Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 50V 50V
Current - Continuous Drain (Id) @ 25°C 170mA 160mA
Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V 7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 5V 0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 25V 36pF @ 25V
Power - Max 500mW 445mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-666 6-TSSOP

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