NTTFS6H850NTAG
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onsemi NTTFS6H850NTAG

Manufacturer No:
NTTFS6H850NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 11A/68A 8WDFN
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The NTTFS6H850NTAG is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for compact and efficient designs, featuring a 3x3mm flat lead package. It is part of onsemi's low to medium voltage MOSFET family, known for its high thermal performance and reliability. The MOSFET is suitable for a variety of power management applications due to its robust specifications and compact form factor.

Key Specifications

ParameterValue
Channel TypeN-Channel
Drain-Source Voltage (Vds)80 V
Drain Current (Id)68 A
On-Resistance (Rds(on))9.5 mΩ
Package Type8-Pin WDFN
Package Size3x3mm
Thermal PerformanceHigh thermal performance
Moisture Sensitivity Level (MSL)MSL 1 - Unlimited

Key Features

  • High current capability of 68 A
  • Low on-resistance of 9.5 mΩ
  • Compact 3x3mm flat lead package for efficient design
  • High thermal performance for reliable operation
  • Low to medium voltage operation (80 V)
  • MSL 1 rating for unlimited shelf life

Applications

The NTTFS6H850NTAG MOSFET is versatile and can be used in a variety of applications, including:

  • Power management systems
  • DC-DC converters
  • Motor control and drive systems
  • Industrial power supplies
  • Automotive systems requiring high current and low on-resistance

Q & A

  1. What is the drain-source voltage rating of the NTTFS6H850NTAG MOSFET?
    The drain-source voltage rating is 80 V.
  2. What is the maximum drain current of the NTTFS6H850NTAG MOSFET?
    The maximum drain current is 68 A.
  3. What is the on-resistance of the NTTFS6H850NTAG MOSFET?
    The on-resistance is 9.5 mΩ.
  4. What type of package does the NTTFS6H850NTAG MOSFET come in?
    The MOSFET comes in an 8-Pin WDFN package.
  5. What are the dimensions of the package?
    The package dimensions are 3x3mm.
  6. What is the moisture sensitivity level (MSL) of the NTTFS6H850NTAG MOSFET?
    The MSL is 1 - Unlimited.
  7. What are some common applications for the NTTFS6H850NTAG MOSFET?
    Common applications include power management systems, DC-DC converters, motor control and drive systems, industrial power supplies, and automotive systems.
  8. Why is the NTTFS6H850NTAG MOSFET suitable for high-current applications?
    It is suitable due to its high current capability of 68 A and low on-resistance of 9.5 mΩ.
  9. What is the thermal performance of the NTTFS6H850NTAG MOSFET?
    The MOSFET features high thermal performance, making it reliable for demanding applications.
  10. Where can I find detailed specifications and datasheets for the NTTFS6H850NTAG MOSFET?
    Detailed specifications and datasheets can be found on the official onsemi website, as well as through distributors like Newark and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1140 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NTTFS6H850NTAG NTTFS6H850NLTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 68A (Tc) 14.8A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 70µA 2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1140 pF @ 40 V 1450 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 107W (Tc) 3.9W (Ta), 73W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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