NTLJS2103PTBG
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onsemi NTLJS2103PTBG

Manufacturer No:
NTLJS2103PTBG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 3.5A 6WDFN
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NTLJS2103PTBG is a P-Channel MOSFET manufactured by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET is packaged in a 6-WDFN Exposed Pad configuration, which enhances thermal dissipation and reduces the overall footprint.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)20V
VGS (Gate-Source Voltage)±12V
ID (Continuous Drain Current)3.5A
RDS(ON) (On-Resistance)35
PD (Power Dissipation)6W
Package6-WDFN Exposed Pad

Key Features

  • Low On-Resistance: 35 mΩ, ensuring minimal voltage drop and reduced power loss.
  • High Current Handling: Continuous drain current of 3.5 A, suitable for demanding applications.
  • Compact Package: 6-WDFN Exposed Pad package for improved thermal performance and reduced footprint.
  • High Voltage Capability: Drain-source voltage of 20 V, making it suitable for a wide range of applications.

Applications

  • Power Management: Ideal for power supply circuits, voltage regulators, and DC-DC converters.
  • Motor Control: Suitable for motor drive circuits due to its high current and low on-resistance.
  • Automotive Systems: Used in various automotive applications requiring high reliability and performance.
  • Consumer Electronics: Found in consumer electronics such as laptops, smartphones, and other portable devices.

Q & A

  1. What is the maximum drain-source voltage of the NTLJS2103PTBG?
    The maximum drain-source voltage is 20 V.
  2. What is the continuous drain current rating of the NTLJS2103PTBG?
    The continuous drain current rating is 3.5 A.
  3. What is the on-resistance of the NTLJS2103PTBG?
    The on-resistance is 35 mΩ.
  4. What package type is the NTLJS2103PTBG available in?
    The NTLJS2103PTBG is available in a 6-WDFN Exposed Pad package.
  5. What is the power dissipation capability of the NTLJS2103PTBG?
    The power dissipation capability is 6 W.
  6. What are some common applications of the NTLJS2103PTBG?
    Common applications include power management, motor control, automotive systems, and consumer electronics.
  7. What is the maximum gate-source voltage of the NTLJS2103PTBG?
    The maximum gate-source voltage is ±12 V.
  8. Why is the 6-WDFN Exposed Pad package beneficial?
    The 6-WDFN Exposed Pad package enhances thermal dissipation and reduces the overall footprint.
  9. Where can I find detailed specifications for the NTLJS2103PTBG?
    Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like Digi-Key and Mouser.
  10. Is the NTLJS2103PTBG suitable for high-current applications?
    Yes, the NTLJS2103PTBG is suitable for high-current applications due to its 3.5 A continuous drain current rating.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1157 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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In Stock

$0.66
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Same Series
NTLJS2103PTAG
NTLJS2103PTAG
MOSFET P-CH 12V 3.5A 6WDFN

Similar Products

Part Number NTLJS2103PTBG NTLJS2103PTAG
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 40mOhm @ 3A, 4.5V 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1157 pF @ 6 V 1157 pF @ 6 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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