NTHL065N65S3F
  • Share:

onsemi NTHL065N65S3F

Manufacturer No:
NTHL065N65S3F
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 46A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTHL065N65S3F is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device is designed for high-power applications requiring robust performance and reliability. With its TO-247 package, it is well-suited for a variety of industrial and automotive uses where high current and voltage handling are essential.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Continuous Drain Current (Id)46 A
Pulse Drain Current (Idm)115 A
On-Resistance (Rds(on))65 mΩ
Power Dissipation (Pd)337 W
PackageTO-247

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Continuous drain current of 46 A and pulse drain current of 115 A, ensuring high current handling capability.
  • Low on-resistance of 65 mΩ, which minimizes power losses and enhances efficiency.
  • High power dissipation of 337 W, allowing for reliable operation in demanding environments.
  • TO-247 package, providing good thermal performance and ease of mounting.

Applications

The NTHL065N65S3F is ideal for various high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and battery management systems.
  • Industrial power supplies, motor drives, and DC-DC converters.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-voltage DC-DC converters and power factor correction circuits.

Q & A

  1. What is the voltage rating of the NTHL065N65S3F MOSFET?
    The voltage rating of the NTHL065N65S3F MOSFET is 650 V.
  2. What is the continuous drain current of the NTHL065N65S3F?
    The continuous drain current is 46 A.
  3. What is the on-resistance of the NTHL065N65S3F?
    The on-resistance (Rds(on)) is 65 mΩ.
  4. In what package is the NTHL065N65S3F available?
    The NTHL065N65S3F is available in the TO-247 package.
  5. What are some typical applications for the NTHL065N65S3F?
    Typical applications include automotive systems, industrial power supplies, renewable energy systems, and high-voltage DC-DC converters.
  6. What is the maximum power dissipation of the NTHL065N65S3F?
    The maximum power dissipation is 337 W.
  7. Is the NTHL065N65S3F suitable for high-current applications?
    Yes, it is suitable with a pulse drain current of 115 A.
  8. Where can I find detailed specifications for the NTHL065N65S3F?
    Detailed specifications can be found on the onsemi website, Digi-Key, and other electronic component distributors.
  9. What family does the NTHL065N65S3F belong to?
    The NTHL065N65S3F belongs to the SUPERFET III family.
  10. Is the NTHL065N65S3F used in automotive applications?
    Yes, it is commonly used in automotive systems such as electric vehicles and battery management systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:5V @ 4.6mA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4075 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):337W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$6.69
56

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTHL065N65S3F NTHL065N65S3HF
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc) 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 65mOhm @ 23A, 10V 65mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 5V @ 4.6mA 5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 98 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4075 pF @ 400 V 4075 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 337W (Tc) 337W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD