NTHL065N65S3F
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onsemi NTHL065N65S3F

Manufacturer No:
NTHL065N65S3F
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 46A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The NTHL065N65S3F is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device is designed for high-power applications requiring robust performance and reliability. With its TO-247 package, it is well-suited for a variety of industrial and automotive uses where high current and voltage handling are essential.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Continuous Drain Current (Id)46 A
Pulse Drain Current (Idm)115 A
On-Resistance (Rds(on))65 mΩ
Power Dissipation (Pd)337 W
PackageTO-247

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Continuous drain current of 46 A and pulse drain current of 115 A, ensuring high current handling capability.
  • Low on-resistance of 65 mΩ, which minimizes power losses and enhances efficiency.
  • High power dissipation of 337 W, allowing for reliable operation in demanding environments.
  • TO-247 package, providing good thermal performance and ease of mounting.

Applications

The NTHL065N65S3F is ideal for various high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and battery management systems.
  • Industrial power supplies, motor drives, and DC-DC converters.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-voltage DC-DC converters and power factor correction circuits.

Q & A

  1. What is the voltage rating of the NTHL065N65S3F MOSFET?
    The voltage rating of the NTHL065N65S3F MOSFET is 650 V.
  2. What is the continuous drain current of the NTHL065N65S3F?
    The continuous drain current is 46 A.
  3. What is the on-resistance of the NTHL065N65S3F?
    The on-resistance (Rds(on)) is 65 mΩ.
  4. In what package is the NTHL065N65S3F available?
    The NTHL065N65S3F is available in the TO-247 package.
  5. What are some typical applications for the NTHL065N65S3F?
    Typical applications include automotive systems, industrial power supplies, renewable energy systems, and high-voltage DC-DC converters.
  6. What is the maximum power dissipation of the NTHL065N65S3F?
    The maximum power dissipation is 337 W.
  7. Is the NTHL065N65S3F suitable for high-current applications?
    Yes, it is suitable with a pulse drain current of 115 A.
  8. Where can I find detailed specifications for the NTHL065N65S3F?
    Detailed specifications can be found on the onsemi website, Digi-Key, and other electronic component distributors.
  9. What family does the NTHL065N65S3F belong to?
    The NTHL065N65S3F belongs to the SUPERFET III family.
  10. Is the NTHL065N65S3F used in automotive applications?
    Yes, it is commonly used in automotive systems such as electric vehicles and battery management systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:5V @ 4.6mA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4075 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):337W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number NTHL065N65S3F NTHL065N65S3HF
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc) 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 65mOhm @ 23A, 10V 65mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 5V @ 4.6mA 5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 98 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4075 pF @ 400 V 4075 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 337W (Tc) 337W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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