NTD14N03RT4G
  • Share:

onsemi NTD14N03RT4G

Manufacturer No:
NTD14N03RT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 2.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD14N03RT4G is an N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a DPAK (TO-252) package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)25 V
ID (Continuous Drain Current)14 A
IDM (Pulse Drain Current)28 A
RDS(on) (On-Resistance)Typically 11 mΩ at VGS = 10 V
PD (Power Dissipation)20.8 W
PackageDPAK (TO-252)

Key Features

  • Low on-resistance (RDS(on)) for reduced power losses.
  • High continuous and pulse current handling capabilities.
  • DPAK package for efficient heat dissipation and compact design.
  • High voltage rating of 25 V, suitable for various power management applications.
  • Fast switching times, making it ideal for high-frequency applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching regulators and inverters.
  • Automotive systems, including battery management and power distribution.
  • Industrial control and automation systems.

Q & A

  1. What is the maximum drain-source voltage of the NTD14N03RT4G?
    The maximum drain-source voltage (VDS) is 25 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 14 A.
  3. What is the typical on-resistance of the NTD14N03RT4G?
    The typical on-resistance (RDS(on)) is 11 mΩ at VGS = 10 V.
  4. In what package is the NTD14N03RT4G available?
    The NTD14N03RT4G is available in a DPAK (TO-252) package.
  5. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control systems, switching regulators, automotive systems, and industrial control systems.
  6. What is the maximum power dissipation of the NTD14N03RT4G?
    The maximum power dissipation (PD) is 20.8 W.
  7. Is the NTD14N03RT4G suitable for high-frequency applications?
    Yes, it is suitable due to its fast switching times.
  8. Where can I find detailed specifications for the NTD14N03RT4G?
    Detailed specifications can be found on the datasheet available from onsemi's official website or through distributors like Mouser, Digi-Key, and Newark.
  9. What is the pulse drain current rating of this MOSFET?
    The pulse drain current (IDM) is 28 A.
  10. Why is the DPAK package beneficial for this MOSFET?
    The DPAK package is beneficial for its efficient heat dissipation and compact design, making it suitable for a variety of applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:95mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.8 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:115 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.04W (Ta), 20.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.66
566

Please send RFQ , we will respond immediately.

Same Series
NTD14N03R-001
NTD14N03R-001
MOSFET N-CH 25V 2.5A IPAK
NTD14N03R
NTD14N03R
MOSFET N-CH 25V 2.5A DPAK
NTD14N03R-1G
NTD14N03R-1G
MOSFET N-CH 25V 2.5A IPAK
NTD14N03RG
NTD14N03RG
MOSFET N-CH 25V 2.5A DPAK
SVD14N03RT4G
SVD14N03RT4G
MOSFET N-CH 25V 2.5A DPAK

Similar Products

Part Number NTD14N03RT4G NTD14N03RT4
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 25 V -
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 95mOhm @ 5A, 10V -
Vgs(th) (Max) @ Id 2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 5 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 115 pF @ 20 V -
FET Feature - -
Power Dissipation (Max) 1.04W (Ta), 20.8W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package DPAK -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP