NSVBC817-40WT1G
  • Share:

onsemi NSVBC817-40WT1G

Manufacturer No:
NSVBC817-40WT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVBC817-40WT1G is a General Purpose NPN Transistor produced by onsemi. It is housed in the SC-70/SOT-323 package, making it suitable for a variety of applications, including automotive and other sectors requiring unique site and control change requirements. This transistor is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. Additionally, it is Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental regulations.

Key Specifications

Rating Symbol Value Unit
Collector - Emitter Voltage VCEO 45 V
Collector - Base Voltage VCBO 50 V
Emitter - Base Voltage VEBO 5.0 V
Collector Current - Continuous IC 500 mAdc
Total Device Dissipation PD 460 mW
Thermal Resistance, Junction-to-Ambient RJA 272 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE 250 - 600 -
Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) - - 0.7 V
Base-Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) VBE(on) - - 1.2 V
Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT 100 MHz

Key Features

  • NSV Prefix: Suitable for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Package: SC-70/SOT-323 package, which is compact and suitable for surface mount applications.
  • High Reliability: Designed to meet the stringent requirements of automotive and industrial applications.
  • Thermal Performance: Total device dissipation of 460 mW and thermal resistance of 272 °C/W.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial Control: Used in industrial control systems, motor control, and power management.
  • Consumer Electronics: Can be used in consumer electronics for general-purpose switching and amplification.
  • Aerospace and Defense: Meets the reliability and environmental standards required in aerospace and defense applications.

Q & A

  1. What is the collector-emitter voltage rating of the NSVBC817-40WT1G transistor?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current for the NSVBC817-40WT1G?

    The maximum collector current is 500 mA.

  3. Is the NSVBC817-40WT1G RoHS compliant?

    Yes, the NSVBC817-40WT1G is RoHS compliant.

  4. What is the typical DC current gain of the NSVBC817-40WT1G at IC = 100 mA and VCE = 1.0 V?

    The typical DC current gain is between 250 to 600.

  5. What is the thermal resistance, junction-to-ambient, of the NSVBC817-40WT1G?

    The thermal resistance, junction-to-ambient, is 272 °C/W.

  6. What is the package type of the NSVBC817-40WT1G transistor?

    The package type is SC-70/SOT-323.

  7. Is the NSVBC817-40WT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  8. What is the collector-emitter saturation voltage at IC = 500 mA and IB = 50 mA?

    The collector-emitter saturation voltage is up to 0.7 V.

  9. What is the base-emitter on voltage at IC = 500 mA and VCE = 1.0 V?

    The base-emitter on voltage is up to 1.2 V.

  10. What is the current-gain - bandwidth product of the NSVBC817-40WT1G?

    The current-gain - bandwidth product is 100 MHz at IC = 10 mA, VCE = 5.0 V, and f = 100 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:460 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
0 Remaining View Similar

In Stock

$0.40
345

Please send RFQ , we will respond immediately.

Same Series
NSVBC817-40WT1G
NSVBC817-40WT1G
TRANS NPN 45V 0.5A SC70-3

Related Product By Categories

PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
BCP5616TA
BCP5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC33725BU
BC33725BU
onsemi
TRANS NPN 45V 0.8A TO92-3
2PD601ARL,235
2PD601ARL,235
Nexperia USA Inc.
TRANS NPN 50V 0.1A TO236AB
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323

Related Product By Brand

BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK