Overview
The NSV60601MZ4T1G is a low VCE(sat) transistor from ON Semiconductor's e2PowerEdge family. This NPN transistor is designed for low voltage, high speed switching applications and features ultra-low saturation voltage (VCE(sat)) and high current gain capability. It is particularly suited for applications requiring efficient energy control, such as DC-DC converters and power management in portable and battery-powered devices.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 60 | Vdc |
| Collector-Base Voltage | VCBO | - | - | 100 | Vdc |
| Emitter-Base Voltage | VEBO | - | - | 6.0 | Vdc |
| Collector Current - Continuous | IC | - | - | 6.0 | A |
| Collector Current - Peak | ICM | - | - | 12.0 | A |
| Collector-Emitter Saturation Voltage (IC = 1.0 A, IB = 0.100 A) | VCE(sat) | - | - | 0.085 | V |
| Base-Emitter Saturation Voltage (IC = 1.0 A, IB = 0.1 A) | VBE(sat) | - | - | 0.900 | V |
| Cutoff Frequency (IC = 500 mA, VCE = 10 V, f = 1.0 MHz) | fT | 100 | - | - | MHz |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Ultra-low saturation voltage (VCE(sat)) and high current gain capability.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements.
- Complementary to NSS60600MZ4.
- High current gain allows direct drive from PMU’s control outputs.
- Ideal for analog amplifiers due to Linear Gain (Beta).
Applications
The NSV60601MZ4T1G is suitable for a variety of applications, including:
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products like disc drives and tape drives.
- Automotive applications, including air bag deployment and instrument cluster systems.
Q & A
- What is the maximum collector-emitter voltage of the NSV60601MZ4T1G?
The maximum collector-emitter voltage (VCEO) is 60 Vdc. - What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 6.0 A. - Is the NSV60601MZ4T1G RoHS compliant?
Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. - What are the typical applications for this transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive systems. - What is the cutoff frequency of the NSV60601MZ4T1G?
The cutoff frequency (fT) is 100 MHz at IC = 500 mA, VCE = 10 V, and f = 1.0 MHz. - Is the NSV60601MZ4T1G suitable for automotive applications?
Yes, it is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements. - What is the package type of the NSV60601MZ4T1G?
The device is packaged in a SOT-223 (Pb-Free) case. - What is the junction and storage temperature range for this transistor?
The junction and storage temperature range is -55°C to +150°C. - Can the NSV60601MZ4T1G be driven directly from PMU’s control outputs?
Yes, the high current gain of the device allows it to be driven directly from PMU’s control outputs. - Is the NSV60601MZ4T1G ideal for analog amplifiers?
Yes, due to its Linear Gain (Beta), it is ideal for use in analog amplifiers.
