Overview
The NSV60601MZ4T3G is a low VCE(sat) NPN transistor from ON Semiconductor's e2PowerEdge family. This surface mount device is designed for low voltage, high speed switching applications, offering ultra-low saturation voltage (VCE(sat)) and high current gain capability. It is particularly suited for applications where efficient energy control is crucial.
Key Specifications
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 Vdc |
| Collector-Base Voltage | VCBO | 100 Vdc |
| Emitter-Base Voltage | VEBO | 6.0 Vdc |
| Collector Current - Continuous | IC | 6.0 A |
| Collector Current - Peak | ICM | 12.0 A |
| Collector-Emitter Saturation Voltage (IC = 1.0 A, IB = 0.1 A) | VCE(sat) | 0.085 V |
| Base-Emitter Saturation Voltage (IC = 1.0 A, IB = 0.1 A) | VBE(sat) | 0.900 V |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 °C |
Key Features
- Ultra-low saturation voltage (VCE(sat)) and high current gain capability.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements.
- Complementary to NSS60600MZ4.
- High current gain allows direct drive from PMU’s control outputs.
- Ideal for analog amplifiers due to Linear Gain (Beta).
Applications
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products like disc drives and tape drives.
- Air bag deployment and instrument cluster in the automotive industry.
Q & A
- What is the maximum collector-emitter voltage of the NSV60601MZ4T3G transistor?
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 6.0 A.
- What is the peak collector current rating of this transistor?
The peak collector current (ICM) is 12.0 A.
- What are the typical applications of the NSV60601MZ4T3G transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive systems like air bag deployment and instrument clusters.
- Is the NSV60601MZ4T3G transistor RoHS compliant?
- What is the junction and storage temperature range of this transistor?
The junction and storage temperature range (TJ, Tstg) is -55 to +150 °C.
- What package type is the NSV60601MZ4T3G transistor available in?
The transistor is available in the SOT-223 package.
- Is the NSV60601MZ4T3G transistor AEC-Q101 qualified?
- What is the collector-emitter saturation voltage (VCE(sat)) of this transistor?
The collector-emitter saturation voltage (VCE(sat)) is typically 0.085 V at IC = 1.0 A and IB = 0.1 A.
- Can the NSV60601MZ4T3G transistor be driven directly from PMU’s control outputs?
