Overview
The NSS60601MZ4T1G is a low VCE(sat) NPN transistor from ON Semiconductor's e2PowerEdge family. This surface mount device is designed for low voltage, high speed switching applications, featuring ultra-low saturation voltage (VCE(sat)) and high current gain capability. It is particularly suited for applications where efficient energy control is crucial, such as in DC-DC converters and power management systems in portable and battery-powered devices.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 60 | Vdc |
| Collector-Base Voltage | VCBO | - | - | 100 | Vdc |
| Emitter-Base Voltage | VEBO | - | - | 6.0 | Vdc |
| Collector Current - Continuous | IC | - | - | 6.0 | A |
| Collector Current - Peak | ICM | - | - | 12.0 | A |
| DC Current Gain (IC = 6.0 A, VCE = 2.0 V) | hFE | - | - | 50 | - |
| Collector-Emitter Saturation Voltage (IC = 6.0 A, IB = 0.6 A) | VCE(sat) | - | - | 0.300 | V |
| Base-Emitter Saturation Voltage (IC = 1.0 A, IB = 0.1 A) | VBE(sat) | - | - | 0.900 | V |
| Cutoff Frequency (IC = 500 mA, VCE = 10 V, f = 1.0 MHz) | fT | - | - | 100 | MHz |
Key Features
- Ultra-low saturation voltage (VCE(sat)) for efficient energy control.
- High current gain capability.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
- Surface mount SOT-223 package for compact design.
- High linear gain (Beta) making it suitable for analog amplifiers.
Applications
- DC-DC converters and power management in portable and battery-powered products such as cellular phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products like disc drives and tape drives.
- Automotive applications including air bag deployment and instrument clusters.
Q & A
- What is the maximum collector-emitter voltage of the NSS60601MZ4T1G transistor?
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 6.0 A.
- What is the peak collector current rating of this transistor?
The peak collector current (ICM) is 12.0 A.
- What is the typical DC current gain (hFE) at IC = 6.0 A and VCE = 2.0 V?
The typical DC current gain (hFE) is 50.
- What is the collector-emitter saturation voltage (VCE(sat)) at IC = 6.0 A and IB = 0.6 A?
The collector-emitter saturation voltage (VCE(sat)) is up to 0.300 V.
- Is the NSS60601MZ4T1G transistor RoHS compliant?
- What are some typical applications of the NSS60601MZ4T1G transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.
- What package type does the NSS60601MZ4T1G transistor use?
The transistor is packaged in a surface mount SOT-223 package.
- Is the NSS60601MZ4T1G transistor suitable for automotive applications?
- What is the cutoff frequency of the NSS60601MZ4T1G transistor?
The cutoff frequency (fT) is 100 MHz at IC = 500 mA, VCE = 10 V, and f = 1.0 MHz.
