Overview
The NSS60601MZ4T3G is a low VCE(sat) transistor from ON Semiconductor's e2PowerEdge family. This NPN transistor is designed for low voltage, high speed switching applications, offering ultra-low saturation voltage (VCE(sat)) and high current gain capability. It is packaged in a surface mount SOT-223 case, making it suitable for a variety of applications where efficient energy control is crucial.
Key Specifications
Characteristic | Symbol | Max Unit | Value |
---|---|---|---|
Collector-Emitter Voltage | VCEO | Vdc | 60 |
Collector-Base Voltage | VCBO | Vdc | 100 |
Emitter-Base Voltage | VEBO | Vdc | 6.0 |
Collector Current - Continuous | IC | A | 6.0 |
Collector Current - Peak | ICM | A | 12.0 |
Total Device Dissipation (TA = 25°C) | PD | mW | 800 |
Thermal Resistance, Junction-to-Ambient | RθJA | °C/W | 155 |
Junction and Storage Temperature Range | TJ, Tstg | °C | -55 to +150 |
Key Features
- Ultra-low saturation voltage (VCE(sat)) and high current gain capability.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- High current gain allows the device to be driven directly from PMU’s control outputs.
- Ideal for use in analog amplifiers due to linear gain (Beta).
Applications
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products like disc drives and tape drives.
- Automotive applications including air bag deployment and instrument cluster systems.
Q & A
- What is the maximum collector-emitter voltage of the NSS60601MZ4T3G?
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 6.0 A.
- Is the NSS60601MZ4T3G RoHS compliant?
- What are the typical applications of the NSS60601MZ4T3G?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive systems.
- What is the thermal resistance, junction-to-ambient (RθJA) of the NSS60601MZ4T3G?
The thermal resistance, junction-to-ambient (RθJA) is 155 °C/W.
- Is the NSS60601MZ4T3G suitable for automotive applications?
- What is the package type and shipping quantity for the NSS60601MZ4T3G?
The package type is SOT-223 (Pb-Free), and it is shipped in quantities of 4,000 per tape and reel.
- What is the junction and storage temperature range for this transistor?
The junction and storage temperature range is -55 to +150 °C.
- Can the NSS60601MZ4T3G be driven directly from PMU’s control outputs?
- Is the NSS60601MZ4T3G suitable for use in analog amplifiers?