Overview
The NSV60600MZ4T3G is a PNP low VCE(sat) transistor from ON Semiconductor's e2PowerEdge family. This surface mount device is designed for low voltage, high speed switching applications, offering ultra-low saturation voltage and high current gain capability. It is particularly suited for applications where efficient energy control is crucial.
Key Specifications
| Characteristic | Symbol | Max/Typ/Min | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | Vdc |
| Collector-Base Voltage | VCBO | -100 | Vdc |
| Emitter-Base Voltage | VEBO | -6.0 | Vdc |
| Collector Current - Continuous | IC | -6.0 | A |
| Collector Current - Peak | ICM | -12.0 | A |
| DC Current Gain (hFE) | hFE | 70 (Min) @ 1A, 2V | |
| Transition Frequency | ft | 100 MHz | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 350 mV @ 600 mA, 6 A | |
| Operating Junction Temperature | TJ | -55 to +150 °C | |
| Package | SOT-223 |
Key Features
- Ultra-low saturation voltage (VCE(sat))
- High current gain capability
- Complementary to NSS60601MZ4
- AEC-Q101 qualified and PPAP capable for automotive applications
- Pb-free, halogen-free/BFR-free, and RoHS compliant
- High linear gain (Beta) making it ideal for analog amplifiers
- Can be driven directly from PMU’s control outputs
Applications
- DC-DC converters and power management in portable and battery-powered products (e.g., cellular and cordless phones, PDAs, computers, printers, digital cameras, MP3 players)
- Low voltage motor controls in mass storage products (e.g., disc drives, tape drives)
- Automotive applications such as air bag deployment and instrument cluster
Q & A
- What is the maximum collector-emitter voltage of the NSV60600MZ4T3G transistor?
The maximum collector-emitter voltage (VCEO) is -60 Vdc.
- What is the maximum collector current for this transistor?
The maximum continuous collector current (IC) is -6.0 A, and the peak collector current (ICM) is -12.0 A.
- What is the typical DC current gain (hFE) of this transistor?
The DC current gain (hFE) is typically 70 at IC = 1 A and VCE = 2 V.
- What is the operating junction temperature range for this transistor?
The operating junction temperature range is -55 to +150 °C.
- Is the NSV60600MZ4T3G transistor RoHS compliant?
- What package type does the NSV60600MZ4T3G transistor use?
The transistor is packaged in a SOT-223 package.
- What are some typical applications for this transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.
- Is the NSV60600MZ4T3G transistor suitable for automotive use?
- What is the transition frequency (ft) of the NSV60600MZ4T3G transistor?
The transition frequency (ft) is 100 MHz.
- What is the collector-emitter saturation voltage (VCE(sat)) for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is typically 350 mV at IB = 600 mA and IC = 6 A.
