NSV60600MZ4T1G
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onsemi NSV60600MZ4T1G

Manufacturer No:
NSV60600MZ4T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 6A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSV60600MZ4T1G is a PNP low VCE(sat) transistor from onsemi's e2PowerEdge family. This surface mount device is designed for low voltage, high speed switching applications, offering ultra-low saturation voltage and high current gain capability. It is particularly suited for applications where efficient energy control is crucial.

Key Specifications

Characteristic Symbol Max Unit
Collector-Emitter Voltage VCEO -60 Vdc
Collector-Base Voltage VCBO -100 Vdc
Emitter-Base Voltage VEBO -6.0 Vdc
Collector Current - Continuous IC -6.0 A
Collector Current - Peak ICM -12.0 A
Collector-Emitter Saturation Voltage (IC = -1.0 A, IB = -0.1 A) VCE(sat) -0.100 V
Base-Emitter Saturation Voltage (IC = -1.0 A, IB = -0.1 A) VBE(sat) -1.0 V
Cutoff Frequency (IC = -500 mA, VCE = -10 V, f = 1.0 MHz) fT 100 MHz
Thermal Resistance, Junction-to-Ambient RθJA 155 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C

Key Features

  • Ultra-low saturation voltage (VCE(sat))
  • High current gain capability
  • Pb-free, halogen-free/BFR-free, and RoHS compliant
  • AEC-Q101 qualified and PPAP capable for automotive applications
  • Complementary to NSS60601MZ4
  • High linear gain (Beta) making it ideal for analog amplifiers
  • Can be driven directly from PMU’s control outputs

Applications

The NSV60600MZ4T1G is suitable for a variety of applications including:

  • DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
  • Low voltage motor controls in mass storage products like disc drives and tape drives.
  • Automotive applications including air bag deployment and instrument clusters.

Q & A

  1. What is the maximum collector-emitter voltage of the NSV60600MZ4T1G?

    The maximum collector-emitter voltage (VCEO) is -60 Vdc.

  2. What is the continuous collector current rating of this transistor?

    The continuous collector current (IC) is -6.0 A.

  3. What is the peak collector current rating?

    The peak collector current (ICM) is -12.0 A.

  4. What is the typical collector-emitter saturation voltage?

    The typical collector-emitter saturation voltage (VCE(sat)) is -0.100 V at IC = -1.0 A and IB = -0.1 A.

  5. Is the NSV60600MZ4T1G RoHS compliant?
  6. What are some typical applications for this transistor?

    Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.

  7. What is the cutoff frequency of the NSV60600MZ4T1G?

    The cutoff frequency (fT) is 100 MHz at IC = -500 mA and VCE = -10 V.

  8. What is the thermal resistance, junction-to-ambient?

    The thermal resistance, junction-to-ambient (RθJA) is 155 °C/W.

  9. What is the junction and storage temperature range?

    The junction and storage temperature range is -55 to +150 °C.

  10. Is the NSV60600MZ4T1G AEC-Q101 qualified?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):6 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:350mV @ 600mA, 6A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1A, 2V
Power - Max:800 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Same Series
NSS60600MZ4T1G
NSS60600MZ4T1G
TRANS PNP 60V 6A SOT223
NSV60600MZ4T3G
NSV60600MZ4T3G
TRANS PNP 60V 6A SOT223
NSV60600MZ4T1G
NSV60600MZ4T1G
TRANS PNP 60V 6A SOT223

Similar Products

Part Number NSV60600MZ4T1G NSV60600MZ4T3G NSV60601MZ4T1G NSS60600MZ4T1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type PNP PNP NPN PNP
Current - Collector (Ic) (Max) 6 A 6 A 6 A 6 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 600mA, 6A 350mV @ 600mA, 6A 300mV @ 600mA, 6A 350mV @ 600mA, 6A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 2V 120 @ 1A, 2V 120 @ 1A, 2V 120 @ 1A, 2V
Power - Max 800 mW 800 mW 800 mW 800 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)

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