Overview
The NSV60600MZ4T1G is a PNP low VCE(sat) transistor from onsemi's e2PowerEdge family. This surface mount device is designed for low voltage, high speed switching applications, offering ultra-low saturation voltage and high current gain capability. It is particularly suited for applications where efficient energy control is crucial.
Key Specifications
Characteristic | Symbol | Max | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | -60 | Vdc |
Collector-Base Voltage | VCBO | -100 | Vdc |
Emitter-Base Voltage | VEBO | -6.0 | Vdc |
Collector Current - Continuous | IC | -6.0 | A |
Collector Current - Peak | ICM | -12.0 | A |
Collector-Emitter Saturation Voltage (IC = -1.0 A, IB = -0.1 A) | VCE(sat) | -0.100 | V |
Base-Emitter Saturation Voltage (IC = -1.0 A, IB = -0.1 A) | VBE(sat) | -1.0 | V |
Cutoff Frequency (IC = -500 mA, VCE = -10 V, f = 1.0 MHz) | fT | 100 | MHz |
Thermal Resistance, Junction-to-Ambient | RθJA | 155 | °C/W |
Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
Key Features
- Ultra-low saturation voltage (VCE(sat))
- High current gain capability
- Pb-free, halogen-free/BFR-free, and RoHS compliant
- AEC-Q101 qualified and PPAP capable for automotive applications
- Complementary to NSS60601MZ4
- High linear gain (Beta) making it ideal for analog amplifiers
- Can be driven directly from PMU’s control outputs
Applications
The NSV60600MZ4T1G is suitable for a variety of applications including:
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products like disc drives and tape drives.
- Automotive applications including air bag deployment and instrument clusters.
Q & A
- What is the maximum collector-emitter voltage of the NSV60600MZ4T1G?
The maximum collector-emitter voltage (VCEO) is -60 Vdc.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is -6.0 A.
- What is the peak collector current rating?
The peak collector current (ICM) is -12.0 A.
- What is the typical collector-emitter saturation voltage?
The typical collector-emitter saturation voltage (VCE(sat)) is -0.100 V at IC = -1.0 A and IB = -0.1 A.
- Is the NSV60600MZ4T1G RoHS compliant?
- What are some typical applications for this transistor?
Typical applications include DC-DC converters, power management in portable devices, low voltage motor controls, and automotive applications.
- What is the cutoff frequency of the NSV60600MZ4T1G?
The cutoff frequency (fT) is 100 MHz at IC = -500 mA and VCE = -10 V.
- What is the thermal resistance, junction-to-ambient?
The thermal resistance, junction-to-ambient (RθJA) is 155 °C/W.
- What is the junction and storage temperature range?
The junction and storage temperature range is -55 to +150 °C.
- Is the NSV60600MZ4T1G AEC-Q101 qualified?