NSR10F30NXT5G
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onsemi NSR10F30NXT5G

Manufacturer No:
NSR10F30NXT5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 1A 2DSN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSR10F30NXT5G is a Schottky barrier diode produced by onsemi, designed for high-performance applications requiring low forward voltage drop and minimal leakage current. This diode is optimized for use in a variety of electronic systems where efficiency and reliability are crucial. It is packaged in a compact Chip Scale DSN (Dual Small Outline No-Lead) package, making it suitable for space-constrained designs.

Key Specifications

CharacteristicSymbolValueUnit
Reverse VoltageVR30V
Forward Current (DC)IF1A
Forward Voltage DropVf470 mV (Typical)mV
Reverse Leakage Current (VR = 30 V)IR100 nA (Typical)nA
Total Power Dissipation @ TA = 25°CPd1.25 WW
Thermal Resistance Junction-to-AmbientRθJA125 °C/W°C/W
Package TypeDSN (Dual Small Outline No-Lead)
Pins2

Key Features

  • Low forward voltage drop of 470 mV (typical), reducing power losses and increasing efficiency.
  • Low leakage current, minimizing standby power consumption.
  • Compact DSN package, ideal for space-constrained designs.
  • High reliability and durability, suitable for a wide range of applications.
  • Optimized for high-frequency and high-efficiency applications.

Applications

  • Power supplies and DC-DC converters.
  • Switch-mode power supplies.
  • High-frequency switching applications.
  • Automotive and industrial power systems.
  • Consumer electronics requiring efficient power management.

Q & A

  1. What is the maximum reverse voltage of the NSR10F30NXT5G?
    The maximum reverse voltage is 30 V.
  2. What is the typical forward voltage drop of the NSR10F30NXT5G?
    The typical forward voltage drop is 470 mV.
  3. What is the package type of the NSR10F30NXT5G?
    The package type is DSN (Dual Small Outline No-Lead).
  4. What is the maximum forward current rating of the NSR10F30NXT5G?
    The maximum forward current rating is 1 A.
  5. What is the thermal resistance junction-to-ambient of the NSR10F30NXT5G?
    The thermal resistance junction-to-ambient is 125 °C/W.
  6. What are the typical applications of the NSR10F30NXT5G?
    Typical applications include power supplies, DC-DC converters, switch-mode power supplies, automotive and industrial power systems, and consumer electronics.
  7. What is the total power dissipation of the NSR10F30NXT5G at TA = 25°C?
    The total power dissipation at TA = 25°C is 1.25 W.
  8. How many pins does the NSR10F30NXT5G have?
    The NSR10F30NXT5G has 2 pins.
  9. What is the reverse leakage current of the NSR10F30NXT5G at VR = 30 V?
    The reverse leakage current at VR = 30 V is typically 100 nA.
  10. Why is the NSR10F30NXT5G preferred in high-frequency applications?
    The NSR10F30NXT5G is preferred in high-frequency applications due to its low forward voltage drop and low leakage current, which enhance efficiency and reduce power losses.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:470 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:2-DSN (1.4x0.6)
Operating Temperature - Junction:150°C (Max)
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In Stock

$0.54
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Similar Products

Part Number NSR10F30NXT5G NSR10F40NXT5G NSR20F30NXT5G NSR10F30QNXT5G NSR10F20NXT5G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 40 V 30 V 30 V 20 V
Current - Average Rectified (Io) 1A (DC) 1A (DC) 2A (DC) 1A (DC) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 470 mV @ 1 A 490 mV @ 1 A 480 mV @ 2 A 470 mV @ 1 A 450 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 100 µA @ 30 V 100 µA @ 40 V 150 µA @ 30 V 100 µA @ 30 V 100 µA @ 20 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN 2-XDFN 2-XDFN 2-XDFN
Supplier Device Package 2-DSN (1.4x0.6) 2-DSN (1.4x0.6) 2-DSN (1.6x.80) 2-DSN (1.4x0.6) 2-DSN (1.4x0.6)
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) -55°C ~ 125°C 150°C (Max)

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