NSR20F30NXT5G
  • Share:

onsemi NSR20F30NXT5G

Manufacturer No:
NSR20F30NXT5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 2A 2DSN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSR20F30NXT5G Schottky Barrier Diode, produced by onsemi, is optimized for low forward voltage drop and low leakage current. It is offered in a Chip Scale Package (CSP) to reduce board space, making it ideal for applications where space is limited. The diode's low thermal resistance enables designers to achieve higher efficiency and meet reduced space requirements.

Key Specifications

ParameterValue
Reverse Voltage (Vr)30 V
Forward Current (If)2.0 A
Forward Voltage Drop (Vf@If)480 mV @ 2 A
Reverse Leakage Current (Ir)150 µA @ 30 V
Package TypeDSN-2 (0.8x1.6)
Pins2

Key Features

  • Very Low Forward Voltage Drop (VF)
  • Low Reverse Current (IR)
  • High ESD Ratings: HBM(3B), MM(C)
  • Low thermal resistance
  • Chip Scale Package (CSP) to reduce board space

Applications

  • LCD and Keypad Backlighting
  • Buck and Boost dc-dc converters
  • Reverse Voltage and Current Protection
  • GPS Systems
  • Consumer/Portable Products
  • Notebooks PCs & PDAs

Q & A

  1. What is the reverse voltage rating of the NSR20F30NXT5G? The reverse voltage rating is 30 V.
  2. What is the maximum forward current of the NSR20F30NXT5G? The maximum forward current is 2.0 A.
  3. What is the forward voltage drop at 2 A? The forward voltage drop at 2 A is 480 mV.
  4. What is the package type of the NSR20F30NXT5G? The package type is DSN-2 (0.8x1.6).
  5. What are the key applications of the NSR20F30NXT5G? Key applications include LCD and Keypad Backlighting, Buck and Boost dc-dc converters, Reverse Voltage and Current Protection, GPS Systems, and Consumer/Portable Products.
  6. What are the benefits of the Chip Scale Package (CSP) of the NSR20F30NXT5G? The CSP reduces board space and enables higher efficiency due to low thermal resistance.
  7. What are the ESD ratings of the NSR20F30NXT5G? The ESD ratings are HBM(3B) and MM(C).
  8. How does the NSR20F30NXT5G help in achieving higher efficiency? The NSR20F30NXT5G helps in achieving higher efficiency due to its low forward voltage drop and low thermal resistance.
  9. What is the reverse leakage current at 30 V? The reverse leakage current at 30 V is 150 µA.
  10. Where can I find more detailed specifications and resources for the NSR20F30NXT5G? More detailed specifications and resources can be found on the onsemi official website and other authorized distributors like RS Components and LCSC.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):2A (DC)
Voltage - Forward (Vf) (Max) @ If:480 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:150 µA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:2-DSN (1.6x.80)
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.64
1,136

Please send RFQ , we will respond immediately.

Similar Products

Part Number NSR20F30NXT5G NSR20F40NXT5G NSR20F30QNXT5G NSR10F30NXT5G NSR20F20NXT5G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 40 V 30 V 30 V 20 V
Current - Average Rectified (Io) 2A (DC) 2A (DC) 2A (DC) 1A (DC) 2A (DC)
Voltage - Forward (Vf) (Max) @ If 480 mV @ 2 A 550 mV @ 2 A 480 mV @ 2 A 470 mV @ 1 A 470 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 150 µA @ 30 V 150 µA @ 40 V 150 µA @ 30 V 100 µA @ 30 V 150 µA @ 20 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN 0603 (1608 Metric) 2-XDFN 2-XDFN 2-XDFN
Supplier Device Package 2-DSN (1.6x.80) 2-DSN (1.6x0.8), (0603) 2-DSN (1.6x.80) 2-DSN (1.4x0.6) 2-DSN (1.6x.80)
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL

Related Product By Brand

NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC