NSR10F20NXT5G
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onsemi NSR10F20NXT5G

Manufacturer No:
NSR10F20NXT5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 20V 1A 2DSN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSR10F20NXT5G is a Schottky Barrier Diode produced by onsemi. This diode is designed for high-efficiency rectification in various electronic applications. It features a low forward voltage drop, which reduces power losses and enhances overall system efficiency. The NSR10F20NXT5G is packaged in a 2-XDFN surface mount package, making it suitable for compact and high-density circuit designs.

Key Specifications

CharacteristicSymbolValueUnit
Reverse VoltageVR20V
Forward Current (DC)IF1A
Forward Surge Current (60 Hz @ 1 cycle)IFSM18A
Reverse Leakage Current (VR = 10 V)IR0.1μA
Thermal Resistance (Junction-to-Ambient)RθJA125°C/W
Total Power Dissipation @ TA = 25°CPd0.5W

Key Features

  • Low forward voltage drop for reduced power losses and increased efficiency.
  • High surge current capability to handle transient conditions.
  • Compact 2-XDFN surface mount package for high-density designs.
  • Low thermal resistance to ensure reliable operation in various environments.
  • High reliability and durability due to the Schottky barrier technology.

Applications

The NSR10F20NXT5G Schottky Barrier Diode is suitable for a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Switch-mode power supplies.
  • High-frequency rectification.
  • Automotive and industrial power systems.
  • Consumer electronics requiring high-efficiency power management.

Q & A

  1. What is the reverse voltage rating of the NSR10F20NXT5G?
    The reverse voltage rating is 20 V.
  2. What is the maximum forward current (DC) for the NSR10F20NXT5G?
    The maximum forward current (DC) is 1 A.
  3. What is the package type of the NSR10F20NXT5G?
    The package type is 2-XDFN surface mount.
  4. What is the thermal resistance (junction-to-ambient) of the NSR10F20NXT5G?
    The thermal resistance (junction-to-ambient) is 125 °C/W.
  5. What are some common applications for the NSR10F20NXT5G?
    Common applications include power supplies, DC-DC converters, switch-mode power supplies, high-frequency rectification, and automotive and industrial power systems.
  6. What is the forward surge current capability of the NSR10F20NXT5G?
    The forward surge current capability is 18 A (60 Hz @ 1 cycle).
  7. What is the total power dissipation at TA = 25°C for the NSR10F20NXT5G?
    The total power dissipation at TA = 25°C is 0.5 W.
  8. Why is the NSR10F20NXT5G preferred in high-efficiency applications?
    The NSR10F20NXT5G is preferred due to its low forward voltage drop, which reduces power losses and enhances overall system efficiency.
  9. Is the NSR10F20NXT5G suitable for high-density circuit designs?
    Yes, the NSR10F20NXT5G is suitable for high-density circuit designs due to its compact 2-XDFN surface mount package.
  10. What technology is used in the NSR10F20NXT5G?
    The NSR10F20NXT5G uses Schottky barrier technology.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A (DC)
Voltage - Forward (Vf) (Max) @ If:450 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 20 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:2-XDFN
Supplier Device Package:2-DSN (1.4x0.6)
Operating Temperature - Junction:150°C (Max)
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In Stock

$0.43
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Similar Products

Part Number NSR10F20NXT5G NSR10F40NXT5G NSR20F20NXT5G NSR10F30NXT5G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 40 V 20 V 30 V
Current - Average Rectified (Io) 1A (DC) 1A (DC) 2A (DC) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 450 mV @ 1 A 490 mV @ 1 A 470 mV @ 2 A 470 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 100 µA @ 20 V 100 µA @ 40 V 150 µA @ 20 V 100 µA @ 30 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 2-XDFN 2-XDFN 2-XDFN 2-XDFN
Supplier Device Package 2-DSN (1.4x0.6) 2-DSN (1.4x0.6) 2-DSN (1.6x.80) 2-DSN (1.4x0.6)
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

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