Overview
The NDS0610-G, produced by onsemi, is a P-Channel Enhancement Mode Field Effect Transistor (FET) designed using onsemi’s proprietary high cell density DMOS technology. This transistor is optimized to minimize on-state resistance, providing rugged and reliable performance along with fast switching capabilities. It is particularly suited for low voltage applications that require a low current high side switch, capable of handling up to 120 mA DC and delivering current up to 1 A.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDSS (Drain-to-Source Voltage) | -60 | V |
| VGSS (Gate-to-Source Voltage) | ±20 | V |
| ID (Drain Current) - Continuous | -0.12 | A |
| ID (Drain Current) - Pulsed | -1 | A |
| PD (Maximum Power Dissipation) | 0.36 | W |
| TJ, Tstg (Operating and Storage Junction Temperature Range) | -55 to +150 | °C |
| TL (Maximum Lead Temperature for Soldering Purposes) | 300 | °C |
| RθJA (Thermal Resistance, Junction-to-Ambient) | 350 | °C/W |
| VGS(th) (Gate Threshold Voltage) | -1 to -3.5 | V |
| RDS(on) (Static Drain-Source On-Resistance) at VGS = -10 V, ID = -0.5 A | 1.0 to 1.7 | Ω |
| RDS(on) (Static Drain-Source On-Resistance) at VGS = -4.5 V, ID = -0.25 A | 10 to 20 | Ω |
Key Features
- Voltage controlled P-Channel small signal switch
- High density cell design for low RDS(on)
- High saturation current
- Low on-state resistance: RDS(on) = 10 Ω @ VGS = -10 V, RDS(on) = 20 Ω @ VGS = -4.5 V
- Rugged and reliable performance with fast switching capabilities
- Suitable for low voltage applications requiring a low current high side switch
Applications
The NDS0610-G is ideal for various low voltage applications, including:
- High side switching in power management circuits
- Low current DC-DC converters
- Audio and video switching circuits
- General purpose switching applications
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NDS0610-G?
The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the gate-to-source voltage (VGSS) range for the NDS0610-G?
The gate-to-source voltage (VGSS) range is ±20 V.
- What is the continuous drain current (ID) rating for the NDS0610-G?
The continuous drain current (ID) rating is -0.12 A.
- What is the maximum power dissipation (PD) for the NDS0610-G?
The maximum power dissipation (PD) is 0.36 W.
- What is the operating and storage junction temperature range for the NDS0610-G?
The operating and storage junction temperature range is -55 to +150°C.
- What is the thermal resistance, junction-to-ambient (RθJA), for the NDS0610-G?
The thermal resistance, junction-to-ambient (RθJA), is 350°C/W.
- What are the typical values for the static drain-source on-resistance (RDS(on)) at different gate-source voltages?
The RDS(on) is typically 1.0 to 1.7 Ω at VGS = -10 V and ID = -0.5 A, and 10 to 20 Ω at VGS = -4.5 V and ID = -0.25 A.
- What is the gate threshold voltage (VGS(th)) range for the NDS0610-G?
The gate threshold voltage (VGS(th)) range is -1 to -3.5 V.
- What are some common applications for the NDS0610-G?
Common applications include high side switching in power management circuits, low current DC-DC converters, audio and video switching circuits, and general purpose switching applications.
- What package type is the NDS0610-G available in?
The NDS0610-G is available in the SOT-23 package.
