MTD3055VL
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onsemi MTD3055VL

Manufacturer No:
MTD3055VL
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 12A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MTD3055VL is a small signal N-channel MOSFET produced by onsemi. Although this product is currently obsolete and no longer in production, it was designed for low voltage, high speed switching applications. The MOSFET is known for its ability to withstand high energy in both avalanche and commutation modes, making it suitable for various high-performance electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)2.5 A
RDS(on) (On-Resistance)0.18 Ω (Typical at VGS = 10 V)
Ciss (Input Capacitance)220 pF (Typical)
Coss (Output Capacitance)120 pF (Typical)
Crss (Reverse Transfer Capacitance)20 pF (Typical)
ton, toff, tr, tf10 ns, 20 ns, 10 ns, 20 ns (Typical)

Key Features

  • High speed switching capability
  • Low on-resistance (RDS(on)) of 0.18 Ω (Typical at VGS = 10 V)
  • High energy withstand in avalanche and commutation modes
  • Low input capacitance and fast switching times

Applications

The MTD3055VL MOSFET is suitable for various low voltage, high speed switching applications. These include but are not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Audio amplifiers and other high-frequency applications
  • General-purpose switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the MTD3055VL MOSFET?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the typical on-resistance (RDS(on)) of the MTD3055VL?
    The typical on-resistance (RDS(on)) is 0.18 Ω at VGS = 10 V.
  3. Is the MTD3055VL still in production?
    No, the MTD3055VL is obsolete and no longer in production.
  4. What are the typical switching times for the MTD3055VL?
    The typical switching times are ton = 10 ns, toff = 20 ns, tr = 10 ns, and tf = 20 ns.
  5. What is the maximum continuous drain current (ID) of the MTD3055VL?
    The maximum continuous drain current (ID) is 2.5 A.
  6. What are some common applications for the MTD3055VL MOSFET?
    Common applications include power supplies, DC-DC converters, motor control systems, audio amplifiers, and general-purpose switching circuits.
  7. What is the gate-source voltage (VGS) rating for the MTD3055VL?
    The gate-source voltage (VGS) rating is ±20 V.
  8. How does the MTD3055VL perform in terms of energy withstand in avalanche and commutation modes?
    The MTD3055VL is designed to withstand high energy in both avalanche and commutation modes.
  9. What are the typical capacitance values for the MTD3055VL?
    The typical capacitance values are Ciss = 220 pF, Coss = 120 pF, and Crss = 20 pF.
  10. Where can I find detailed specifications for the MTD3055VL MOSFET?
    Detailed specifications can be found in the datasheet available on the onsemi website and other electronic component distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:180mOhm @ 6A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number MTD3055VL MTP3055VL MTD3055V
Manufacturer onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 6A, 5V 180mOhm @ 6A, 5V 150mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V 10 nC @ 5 V 17 nC @ 10 V
Vgs (Max) ±20V ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25 V 570 pF @ 25 V 500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.9W (Ta), 48W (Tc) 48W (Tc) 3.9W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -65°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount
Supplier Device Package TO-252AA TO-220-3 TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220-3 TO-252-3, DPak (2 Leads + Tab), SC-63

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