MMBT6520LT1G
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onsemi MMBT6520LT1G

Manufacturer No:
MMBT6520LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 350V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT6520LT1G is a high-voltage PNP silicon transistor manufactured by onsemi. This transistor is designed to operate in a variety of applications requiring high voltage and moderate current handling. It is packaged in a SOT-23 case, making it suitable for surface-mount technology (SMT) assembly. The device is lead-free, complying with environmental regulations and standards.

Key Specifications

ParameterValue
Transistor TypePNP Silicon
Collector-Base Voltage (VCB)-350 V
Collector-Emitter Voltage (VCE)-350 V
Emitter-Base Voltage (VEB)-5 V
Collector Current (IC)-500 mA
Power Dissipation (PD)0.225/0.3 W
Package TypeSOT-23
Operating Temperature Range-55°C to 150°C

Key Features

  • High voltage capability: Suitable for applications requiring up to -350 V collector-base and collector-emitter voltages.
  • Surface-mount package: SOT-23 package for easy integration into SMT designs.
  • Lead-free: Compliant with environmental regulations such as RoHS.
  • Low power dissipation: Maximum power dissipation of 0.225/0.3 W.
  • Broad operating temperature range: From -55°C to 150°C.

Applications

The MMBT6520LT1G transistor is versatile and can be used in a variety of applications, including:

  • Switching and amplification circuits in high-voltage systems.
  • Automotive and industrial control systems.
  • Power supplies and voltage regulators.
  • Audio and signal processing circuits.

Q & A

  1. What is the collector-base voltage rating of the MMBT6520LT1G transistor?
    The collector-base voltage rating is -350 V.
  2. What is the maximum collector current for the MMBT6520LT1G?
    The maximum collector current is -500 mA.
  3. What package type is the MMBT6520LT1G transistor available in?
    The transistor is available in a SOT-23 package.
  4. Is the MMBT6520LT1G lead-free?
    Yes, the MMBT6520LT1G is lead-free and compliant with RoHS regulations.
  5. What is the operating temperature range for the MMBT6520LT1G?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications for the MMBT6520LT1G transistor?
    Common applications include switching and amplification circuits, automotive and industrial control systems, power supplies, and audio and signal processing circuits.
  7. What is the maximum power dissipation for the MMBT6520LT1G?
    The maximum power dissipation is 0.225/0.3 W.
  8. Where can I find detailed specifications for the MMBT6520LT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and TME.
  9. Is the MMBT6520LT1G suitable for high-frequency applications?
    The MMBT6520LT1G is generally suited for medium to low-frequency applications due to its high voltage and moderate current capabilities.
  10. Can the MMBT6520LT1G be used in high-temperature environments?
    Yes, it can operate in temperatures up to 150°C, making it suitable for high-temperature environments.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:1V @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 50mA, 10V
Power - Max:225 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Same Series
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Similar Products

Part Number MMBT6520LT1G MMBT6521LT1G MMBT6520LT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type PNP NPN PNP
Current - Collector (Ic) (Max) 500 mA 100 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 350 V 25 V 350 V
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA 500mV @ 5mA, 50mA 1V @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 500nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA, 10V 300 @ 2mA, 10V 20 @ 50mA, 10V
Power - Max 225 mW 225 mW 225 mW
Frequency - Transition 200MHz - 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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