Overview
The NSVMMBT6520LT1G is a high-voltage PNP silicon transistor manufactured by onsemi. This device is part of the MMBT6520L series and is designed to meet the stringent requirements of automotive and other applications that demand unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and performance in various environments.
The transistor is packaged in a SOT-23 (TO-236) case and is Pb-free, halogen-free, and RoHS compliant, making it suitable for modern electronic designs that prioritize environmental sustainability.
Key Specifications
| Symbol | Characteristic | Value | Unit |
|---|---|---|---|
| VCEO | Collector-Emitter Voltage | -350 | Vdc |
| VCBO | Collector-Base Voltage | -350 | Vdc |
| VEBO | Emitter-Base Voltage | -5.0 | Vdc |
| IB | Base Current | -250 | mA |
| IC | Collector Current - Continuous | -500 | mAdc |
| PD (FR-5 Board) | Total Device Dissipation | 225 mW (Derate above 25°C) | mW / °C |
| RJA (FR-5 Board) | Thermal Resistance, Junction-to-Ambient | 556 °C/W | °C/W |
| TJ, Tstg | Junction and Storage Temperature | -55 to +150 | °C |
| hFE (DC Current Gain) | 20 - 200 (depending on IC and VCE) | - | - |
| VCE(sat) | Collector-Emitter Saturation Voltage | -0.30 to -1.0 V (depending on IC and IB) | Vdc |
| VBE(sat) | Base-Emitter Saturation Voltage | -0.75 to -0.90 V (depending on IC and IB) | Vdc |
| fT (Current-Gain - Bandwidth Product) | 40 - 200 MHz | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- High collector-emitter voltage (VCEO) and collector-base voltage (VCBO) of -350 Vdc.
- High collector current capability of up to -500 mA.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High current-gain - bandwidth product (fT) of up to 200 MHz.
- Wide operating temperature range from -55°C to +150°C.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial control systems: Can be used in high-voltage and high-current applications in industrial settings.
- Audio and power amplifiers: The high current gain and low saturation voltages make it suitable for audio and power amplifier circuits.
- Switching circuits: The transistor's high fT and low saturation voltages make it ideal for high-frequency switching applications.
- General-purpose amplification: Can be used in a variety of general-purpose amplification circuits requiring high voltage and current handling.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the NSVMMBT6520LT1G transistor?
The maximum collector-emitter voltage (VCEO) is -350 Vdc.
- Is the NSVMMBT6520LT1G transistor RoHS compliant?
- What is the maximum collector current (IC) of the NSVMMBT6520LT1G transistor?
The maximum collector current (IC) is -500 mA.
- What is the operating temperature range of the NSVMMBT6520LT1G transistor?
The operating temperature range is from -55°C to +150°C.
- What is the current-gain - bandwidth product (fT) of the NSVMMBT6520LT1G transistor?
The current-gain - bandwidth product (fT) is up to 200 MHz.
- Is the NSVMMBT6520LT1G transistor suitable for automotive applications?
- What is the package type of the NSVMMBT6520LT1G transistor?
The transistor is packaged in a SOT-23 (TO-236) case.
- What are the typical values for the collector-emitter saturation voltage (VCE(sat)) of the NSVMMBT6520LT1G transistor?
The typical values for VCE(sat) range from -0.30 to -1.0 V depending on the collector current and base current.
- What are the thermal characteristics of the NSVMMBT6520LT1G transistor?
The total device dissipation on an FR-5 board is 225 mW (derating above 25°C), and the thermal resistance, junction-to-ambient, is 556 °C/W.
- Is the NSVMMBT6520LT1G transistor recommended for new designs?
No, the device is discontinued and not recommended for new designs. Please contact an onsemi representative for information on alternative devices.
