Overview
The MMBFJ309 is an N-Channel RF JFET transistor manufactured by onsemi, formerly known as Fairchild Semiconductor. This device is specifically designed for VHF/UHF amplifier, oscillator, and mixer applications. It is packaged in a SOT-23 (TO-236) case, making it suitable for surface mount technology (SMT) and offering a compact solution for high-frequency applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 25 | Vdc |
| Gate-Source Voltage | VGS | -25 | Vdc |
| Gate Current | IG | 10 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 mW (Derate above 25°C: 1.8 mW/°C) | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | 556 °C/W | °C/W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Gate-Source Breakdown Voltage (IG = -1.0 µA, VDS = 0) | V(BR)GSS | -25 | Vdc |
| Gate Reverse Current (VGS = -15 Vdc) | IGSS | -1.0 nA | nA |
| Gate-Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nA) | VGS(off) | -1.0 to -4.0 | Vdc |
| Zero-Gate Voltage Drain Current (VDS = 10 Vdc, VGS = 0) | IDSS | 12 to 30 | mA |
| Gate-Source Forward Voltage (IG = 1.0 mA, VDS = 0) | VGS(f) | -1.0 | Vdc |
| Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mA, f = 1.0 kHz) | |Yfs| | 8.0 to 18 | mmhos |
Key Features
- Interchangeable Drain and Source: The MMBFJ309 allows for the drain and source terminals to be interchanged, providing flexibility in circuit design.
- AEC-Q101 Qualified: This device is qualified to the AEC-Q101 standard, making it suitable for automotive and other applications requiring high reliability.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: The MMBFJ309 is environmentally friendly and complies with RoHS regulations.
- High Frequency Performance: Designed for VHF/UHF applications, it can achieve gains of 16 dB at 100 MHz and 12 dB at 450 MHz as a common gate amplifier.
- Compact SOT-23 Package: The device is packaged in a small SOT-23 case, ideal for surface mount technology and space-constrained designs.
Applications
- VHF/UHF Amplifiers: The MMBFJ309 is optimized for use in VHF/UHF amplifier circuits, offering high gain and stability.
- Oscillators and Mixers: Its characteristics make it suitable for oscillator and mixer applications in high-frequency systems.
- Automotive and Industrial Applications: With its AEC-Q101 qualification, it is reliable for use in automotive and other industrial environments.
Q & A
- What is the maximum drain-source voltage for the MMBFJ309?
The maximum drain-source voltage (VDS) is 25 Vdc.
- What is the operating temperature range for the MMBFJ309?
The operating temperature range is -55°C to +150°C.
- Is the MMBFJ309 RoHS compliant?
Yes, the MMBFJ309 is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What is the typical zero-gate voltage drain current (IDSS) for the MMBFJ309?
The typical zero-gate voltage drain current (IDSS) is 24 mA.
- What are the common applications of the MMBFJ309?
The MMBFJ309 is commonly used in VHF/UHF amplifiers, oscillators, and mixers.
- What is the thermal resistance, junction-to-ambient (RθJA), for the MMBFJ309?
The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W.
- Is the MMBFJ309 qualified for automotive applications?
Yes, the MMBFJ309 is AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications.
- What is the package type for the MMBFJ309?
The MMBFJ309 is packaged in a SOT-23 (TO-236) case.
- What is the maximum gate-source voltage for the MMBFJ309?
The maximum gate-source voltage (VGS) is -25 Vdc.
- What is the forward transfer admittance for the MMBFJ309?
The forward transfer admittance (|Yfs|) is 8.0 to 18 mmhos at 1 kHz.
