MBRD835LT4H
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onsemi MBRD835LT4H

Manufacturer No:
MBRD835LT4H
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRD835LT4H is a switch-mode power rectifier produced by onsemi, utilizing the Schottky Barrier principle with a proprietary barrier metal. This component is designed for use in various high-frequency switching applications, including output rectifiers, free-wheeling diodes, protection diodes, and steering diodes in switching power supplies, inverters, and other inductive switching circuits.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM35V
Working Peak Reverse VoltageVRWM35V
DC Blocking VoltageVR35V
Average Rectified Forward Current (TC = 88°C)IF(AV)8.0A
Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 80°C)IFRM16A
Maximum Instantaneous Forward Voltage (iF = 8 Amps, TC = +25°C)VF0.51V
Maximum Instantaneous Reverse Current (Rated dc Voltage, TC = +25°C)IR1.4mA
Operating Junction TemperatureTJ-65 to +150°C
Storage Case TemperatureTstg-65 to +150°C
Package TypeDPAK

Key Features

  • Low Forward Voltage: The MBRD835LT4H features a low maximum instantaneous forward voltage of 0.51 V at 8 A and 25°C, ensuring efficient operation.
  • High Operating Junction Temperature: The device can operate up to 150°C, making it suitable for high-temperature applications.
  • Compact Size: The DPAK package is designed for surface mount, offering a compact solution for modern designs.
  • Lead Formed for Surface Mount: The leads are readily solderable, facilitating easy mounting.
  • ESD Rating: The device has a high ESD rating, with a Machine Model > 400 V and Human Body Model > 8000 V.
  • Pb-Free and RoHS Compliant: Ensuring environmental compliance and safety.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.

Applications

The MBRD835LT4H is ideal for use in various applications, including:

  • Switching power supplies
  • Inverters
  • Inductive switching circuits
  • Output rectifiers
  • Free-wheeling diodes
  • Protection and steering diodes
  • Automotive systems requiring AEC-Q101 qualification

Q & A

  1. What is the peak repetitive reverse voltage of the MBRD835LT4H?
    The peak repetitive reverse voltage (VRRM) is 35 V.
  2. What is the average rectified forward current of the MBRD835LT4H at 88°C?
    The average rectified forward current (IF(AV)) is 8.0 A at 88°C.
  3. What is the maximum instantaneous forward voltage of the MBRD835LT4H at 8 A and 25°C?
    The maximum instantaneous forward voltage (VF) is 0.51 V at 8 A and 25°C.
  4. What is the operating junction temperature range of the MBRD835LT4H?
    The operating junction temperature range is -65 to +150°C.
  5. Is the MBRD835LT4H Pb-Free and RoHS Compliant?
    Yes, the MBRD835LT4H is Pb-Free and RoHS Compliant.
  6. What package type does the MBRD835LT4H use?
    The MBRD835LT4H uses a DPAK package.
  7. What are the ESD ratings for the MBRD835LT4H?
    The ESD ratings are Machine Model > 400 V and Human Body Model > 8000 V.
  8. Is the MBRD835LT4H suitable for automotive applications?
    Yes, it is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other stringent applications.
  9. What are some typical applications of the MBRD835LT4H?
    Typical applications include switching power supplies, inverters, inductive switching circuits, output rectifiers, free-wheeling diodes, and protection and steering diodes.
  10. How is the MBRD835LT4H packaged for shipping?
    The device is shipped in various packaging options, including tape and reel and rail packaging, depending on the specific part number and configuration.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):35 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:510 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1.4 mA @ 35 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number MBRD835LT4H MBRD835LT4 MBRD835LT4G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 35 V 35 V 35 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 510 mV @ 8 A 510 mV @ 8 A 510 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 1.4 mA @ 35 V 1.4 mA @ 35 V 1.4 mA @ 35 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK
Operating Temperature - Junction -65°C ~ 150°C - -65°C ~ 150°C

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