Overview
The MBRD835LT4G is a high-performance Schottky diode manufactured by ON Semiconductor. This switch-mode power rectifier utilizes the Schottky Barrier principle with a proprietary barrier metal, making it suitable for various power supply and rectification applications. It is designed for use as output rectifiers, free-wheeling diodes, protection diodes, and steering diodes in switching power supplies, inverters, and other inductive switching circuits. The diode is known for its low forward voltage drop, fast switching speed, and high-temperature operation, which enhance its efficiency and reliability in electronic designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 35 | V |
| Average Rectified Forward Current (TC = 88°C) | IF(AV) | 8.0 | A |
| Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 80°C) | IFRM | 16 | A |
| Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) | IFSM | 75 | A |
| Repetitive Avalanche Current (Current Decaying Linearly to Zero in 1 μs, Frequency Limited by TJmax) | IAR | 2.0 | A |
| Storage / Operating Case Temperature | Tstg | -65 to +150 | °C |
| Operating Junction Temperature | TJ | -65 to +150 | °C |
| Maximum Instantaneous Forward Voltage (iF = 8 Amps, TC = +25°C) | VF | 0.51 | V |
| Thermal Resistance - Junction-to-Case | RθJC | 2.8 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RθJA | 80 | °C/W |
Key Features
- Low Forward Voltage Drop: Reduces power loss and improves efficiency.
- Fast Switching Speed: Allows for high-frequency operation.
- Low Reverse Recovery Time: Minimizes switching losses.
- High Temperature Operation: Can withstand high-temperature environments.
- Compact Package: Space-saving design for compact circuits.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
Applications
- Power Supplies: Used in power supply circuits for rectification and voltage regulation due to its low forward voltage drop and fast switching speed.
- DC-DC Converters: Aids in energy conversion and power efficiency in DC-DC converter applications.
- Reverse Polarity Protection: Employed in circuits requiring reverse polarity protection to safeguard components from damage.
- Battery Charging Systems: Assists in rectifying and regulating the charging current for batteries, ensuring minimal losses during charging cycles).
- Voltage Regulation: Provides stable and efficient rectification of AC voltage to obtain a desired DC output in voltage regulation applications).
Q & A
- What is the peak repetitive reverse voltage of the MBRD835LT4G?
The peak repetitive reverse voltage (VRRM) is 35 volts.
- What is the average rectified forward current of the MBRD835LT4G at TC = 88°C?
The average rectified forward current (IF(AV)) is 8.0 amps at TC = 88°C.
- What is the maximum instantaneous forward voltage of the MBRD835LT4G at iF = 8 amps and TC = +25°C?
The maximum instantaneous forward voltage (VF) is 0.51 volts at iF = 8 amps and TC = +25°C.
- What is the thermal resistance - junction-to-case of the MBRD835LT4G?
The thermal resistance - junction-to-case (RθJC) is 2.8 °C/W.
- Is the MBRD835LT4G Pb-Free and RoHS compliant?
Yes, the MBRD835LT4G is Pb-Free and RoHS compliant.
- What are the typical applications of the MBRD835LT4G?
The MBRD835LT4G is commonly used in power supplies, DC-DC converters, reverse polarity protection, battery charging systems, and voltage regulation applications.
- What is the operating junction temperature range of the MBRD835LT4G?
The operating junction temperature range is -65°C to +150°C.
- What is the non-repetitive peak surge current of the MBRD835LT4G?
The non-repetitive peak surge current (IFSM) is 75 amps.
- Is the MBRD835LT4G suitable for high-frequency operations?
Yes, the MBRD835LT4G is suitable for high-frequency operations due to its fast switching speed.
- What is the reverse recovery time of the MBRD835LT4G?
The reverse recovery time is approximately 35 ns.
