FQT5P10TF
  • Share:

onsemi FQT5P10TF

Manufacturer No:
FQT5P10TF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQT5P10TF is a P-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This MOSFET is designed for high performance and reliability in various electronic applications. It is packaged in a SOT-223-4 configuration, making it suitable for a wide range of power management and switching applications.

Key Specifications

ParameterValue
Transistor PolarityP-Channel
ConfigurationSingle
Drain to Source Voltage (Vdss)100 V
Continuous Drain Current1 A
Power Dissipation2 W
On-Resistance (Rds(on))1.05 Ω @ 10 V, 500 mA
Threshold Voltage (Vth)4 V @ 250 μA
Package TypeSOT-223-4

Key Features

  • P-Channel enhancement mode operation for efficient power management.
  • High drain to source voltage (Vdss) of 100 V, suitable for high-voltage applications.
  • Low on-resistance (Rds(on)) of 1.05 Ω @ 10 V, 500 mA, reducing power losses.
  • Compact SOT-223-4 package for space-efficient designs.
  • Produced using onsemi's proprietary planar stripe and DMOS technology for enhanced performance and reliability.

Applications

The FQT5P10TF MOSFET is versatile and can be used in a variety of applications, including:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial electronics.
  • General-purpose switching and amplification.

Q & A

  1. What is the transistor polarity of the FQT5P10TF? The FQT5P10TF is a P-Channel MOSFET.
  2. What is the maximum drain to source voltage (Vdss) of the FQT5P10TF? The maximum Vdss is 100 V.
  3. What is the continuous drain current rating of the FQT5P10TF? The continuous drain current is 1 A.
  4. What is the on-resistance (Rds(on)) of the FQT5P10TF? The on-resistance is 1.05 Ω @ 10 V, 500 mA.
  5. What is the package type of the FQT5P10TF? The package type is SOT-223-4.
  6. What technology is used in the production of the FQT5P10TF? The FQT5P10TF is produced using onsemi's proprietary planar stripe and DMOS technology.
  7. What are some common applications of the FQT5P10TF? Common applications include power management, DC-DC converters, motor control, automotive electronics, and general-purpose switching.
  8. What is the threshold voltage (Vth) of the FQT5P10TF? The threshold voltage is 4 V @ 250 μA.
  9. Is the FQT5P10TF RoHS compliant? Yes, the FQT5P10TF is RoHS compliant.
  10. What is the power dissipation rating of the FQT5P10TF? The power dissipation rating is 2 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.68
951

Please send RFQ , we will respond immediately.

Related Product By Categories

2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC