Overview
The FQT1N60CTF-WS is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using onsemi's proprietary planar stripe and DMOS technology, ensuring high performance and reliability. It is designed for high-voltage applications and is packaged in a surface-mount SOT-223 format, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (Vds) | 600 V |
| Continuous Drain Current (Id) | 200 mA |
| On-Resistance (Rds(on)) | 9.3 Ω at Vgs = 10 V, Id = 0.1 A |
| Threshold Voltage (Vth) | 4 V at Id = 250 μA |
| Package Type | SOT-223-4 |
| Power Dissipation (Pd) | 1.1 W |
| RoHS Compliance | Yes |
Key Features
- High voltage rating of 600 V, making it suitable for high-voltage applications.
- Low on-resistance of 9.3 Ω, which reduces power losses and improves efficiency.
- Compact SOT-223 package, ideal for space-constrained designs.
- Enhancement mode operation, providing a high level of control over the switching characteristics.
- RoHS compliant, ensuring environmental sustainability.
Applications
The FQT1N60CTF-WS MOSFET is versatile and can be used in various high-voltage applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Switching regulators and power management circuits.
- Automotive and industrial control systems.
Q & A
- What is the voltage rating of the FQT1N60CTF-WS MOSFET?
The voltage rating of the FQT1N60CTF-WS MOSFET is 600 V. - What is the continuous drain current of the FQT1N60CTF-WS?
The continuous drain current is 200 mA. - What is the on-resistance of the FQT1N60CTF-WS?
The on-resistance is 9.3 Ω at Vgs = 10 V, Id = 0.1 A. - What package type is the FQT1N60CTF-WS available in?
The FQT1N60CTF-WS is available in a SOT-223-4 package. - Is the FQT1N60CTF-WS RoHS compliant?
Yes, the FQT1N60CTF-WS is RoHS compliant. - What is the power dissipation of the FQT1N60CTF-WS?
The power dissipation is 1.1 W. - What is the threshold voltage of the FQT1N60CTF-WS?
The threshold voltage is 4 V at Id = 250 μA. - What technology is used to fabricate the FQT1N60CTF-WS?
The FQT1N60CTF-WS is fabricated using onsemi's proprietary planar stripe and DMOS technology. - In what types of applications is the FQT1N60CTF-WS typically used?
The FQT1N60CTF-WS is typically used in high-voltage applications such as power supplies, motor control, switching regulators, and automotive and industrial control systems. - Where can I find detailed specifications for the FQT1N60CTF-WS?
Detailed specifications can be found in the datasheet available on onsemi's official website and other authorized distributors like Avnet and Element14.
