FQD2N100TM
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onsemi FQD2N100TM

Manufacturer No:
FQD2N100TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1000V 1.6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FQD2N100TM is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using a proprietary planar stripe and DMOS technology, which enhances its performance and reliability. The FQD2N100TM is packaged in a 3-pin DPAK (TO-252) package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 1000 V
ID (Continuous Drain Current) 1.6 A
RDS(ON) (On-Resistance) Typically low, optimized for motor driver applications Ω
VGS (Gate-Source Voltage) ±40 V
Package Type 3-Pin DPAK (TO-252)

Key Features

  • High Voltage Capability: The FQD2N100TM can handle up to 1000V drain-source voltage, making it suitable for high-voltage applications.
  • Low On-Resistance: Optimized for low on-resistance, this MOSFET is ideal for motor driver applications where efficiency is crucial.
  • Enhancement Mode Operation: This N-Channel enhancement mode MOSFET requires a positive gate-source voltage to create a conductive channel.
  • DPAK Package: The 3-pin DPAK package provides good thermal performance and is compact, making it suitable for a variety of applications.

Applications

  • Motor Drivers: The low on-resistance and high voltage capability make this MOSFET ideal for motor driver applications.
  • Power Supplies: Suitable for use in high-voltage power supplies due to its robust voltage handling capabilities.
  • Industrial Control Systems: Can be used in various industrial control systems that require high reliability and performance.
  • Automotive Systems: Applicable in automotive systems that demand high voltage and current handling.

Q & A

  1. What is the maximum drain-source voltage of the FQD2N100TM?

    The maximum drain-source voltage (VDS) is 1000V.

  2. What is the continuous drain current rating of the FQD2N100TM?

    The continuous drain current (ID) is 1.6A.

  3. What is the typical on-resistance of the FQD2N100TM?

    The on-resistance (RDS(ON)) is typically low and optimized for motor driver applications.

  4. What is the gate-source voltage range for the FQD2N100TM?

    The gate-source voltage (VGS) range is ±40V.

  5. What package type is the FQD2N100TM available in?

    The FQD2N100TM is available in a 3-Pin DPAK (TO-252) package.

  6. What are some common applications for the FQD2N100TM?

    Common applications include motor drivers, power supplies, industrial control systems, and automotive systems.

  7. Why is the FQD2N100TM suitable for motor driver applications?

    It is suitable due to its low on-resistance and high voltage capability.

  8. What technology is used to fabricate the FQD2N100TM?

    The FQD2N100TM is fabricated using a proprietary planar stripe and DMOS technology.

  9. Who is the manufacturer of the FQD2N100TM?

    The manufacturer is onsemi.

  10. Where can I find detailed specifications for the FQD2N100TM?

    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser Electronics and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
FQU2N100TU
FQU2N100TU
MOSFET N-CH 1000V 1.6A IPAK
FQD2N100TF
FQD2N100TF
MOSFET N-CH 1000V 1.6A DPAK

Similar Products

Part Number FQD2N100TM FQD2N100TF
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 800mA, 10V 9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V 15.5 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 25 V 520 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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