FQD2N100TM
  • Share:

onsemi FQD2N100TM

Manufacturer No:
FQD2N100TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1000V 1.6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD2N100TM is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using a proprietary planar stripe and DMOS technology, which enhances its performance and reliability. The FQD2N100TM is packaged in a 3-pin DPAK (TO-252) package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 1000 V
ID (Continuous Drain Current) 1.6 A
RDS(ON) (On-Resistance) Typically low, optimized for motor driver applications Ω
VGS (Gate-Source Voltage) ±40 V
Package Type 3-Pin DPAK (TO-252)

Key Features

  • High Voltage Capability: The FQD2N100TM can handle up to 1000V drain-source voltage, making it suitable for high-voltage applications.
  • Low On-Resistance: Optimized for low on-resistance, this MOSFET is ideal for motor driver applications where efficiency is crucial.
  • Enhancement Mode Operation: This N-Channel enhancement mode MOSFET requires a positive gate-source voltage to create a conductive channel.
  • DPAK Package: The 3-pin DPAK package provides good thermal performance and is compact, making it suitable for a variety of applications.

Applications

  • Motor Drivers: The low on-resistance and high voltage capability make this MOSFET ideal for motor driver applications.
  • Power Supplies: Suitable for use in high-voltage power supplies due to its robust voltage handling capabilities.
  • Industrial Control Systems: Can be used in various industrial control systems that require high reliability and performance.
  • Automotive Systems: Applicable in automotive systems that demand high voltage and current handling.

Q & A

  1. What is the maximum drain-source voltage of the FQD2N100TM?

    The maximum drain-source voltage (VDS) is 1000V.

  2. What is the continuous drain current rating of the FQD2N100TM?

    The continuous drain current (ID) is 1.6A.

  3. What is the typical on-resistance of the FQD2N100TM?

    The on-resistance (RDS(ON)) is typically low and optimized for motor driver applications.

  4. What is the gate-source voltage range for the FQD2N100TM?

    The gate-source voltage (VGS) range is ±40V.

  5. What package type is the FQD2N100TM available in?

    The FQD2N100TM is available in a 3-Pin DPAK (TO-252) package.

  6. What are some common applications for the FQD2N100TM?

    Common applications include motor drivers, power supplies, industrial control systems, and automotive systems.

  7. Why is the FQD2N100TM suitable for motor driver applications?

    It is suitable due to its low on-resistance and high voltage capability.

  8. What technology is used to fabricate the FQD2N100TM?

    The FQD2N100TM is fabricated using a proprietary planar stripe and DMOS technology.

  9. Who is the manufacturer of the FQD2N100TM?

    The manufacturer is onsemi.

  10. Where can I find detailed specifications for the FQD2N100TM?

    Detailed specifications can be found on the official onsemi website, as well as on distributor websites like Mouser Electronics and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.98
993

Please send RFQ , we will respond immediately.

Same Series
FQU2N100TU
FQU2N100TU
MOSFET N-CH 1000V 1.6A IPAK
FQD2N100TF
FQD2N100TF
MOSFET N-CH 1000V 1.6A DPAK

Similar Products

Part Number FQD2N100TM FQD2N100TF
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 800mA, 10V 9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V 15.5 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 25 V 520 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4