FFSP1065A
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onsemi FFSP1065A

Manufacturer No:
FFSP1065A
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE SCHOTTKY 650V 15A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSP1065A is a Silicon Carbide (SiC) Schottky Diode produced by ON Semiconductor. This diode utilizes advanced SiC technology, offering superior switching performance and higher reliability compared to traditional silicon-based diodes. It is designed to handle high voltage and current, making it suitable for a variety of power management and conversion applications.

Key Specifications

ParameterValue
Voltage Rating (VDRM)650 V
Current Rating (IF(AV))10 A
Forward Voltage Drop (VF)1.35 V (typical at 10 A)
Reverse Leakage Current (IR)10 μA (maximum at 650 V)
Junction-to-Case Thermal Resistance (RθJC)0.5 °C/W
Operating Junction Temperature (TJ)-40°C to 175°C
Package TypeTO-247-3L

Key Features

  • High voltage rating of 650 V and current rating of 10 A.
  • Low forward voltage drop (VF) of 1.35 V, reducing power losses.
  • High reliability and durability due to SiC technology.
  • Fast switching times, enhancing efficiency in power conversion applications.
  • High junction-to-case thermal resistance, ensuring effective heat dissipation.

Applications

  • Power factor correction (PFC) circuits.
  • DC-DC converters and power supplies.
  • Motor drives and control systems.
  • Renewable energy systems, such as solar and wind power.
  • Electric vehicle (EV) charging systems and power management.

Q & A

  1. What is the voltage rating of the FFSP1065A SiC Schottky Diode?
    The voltage rating of the FFSP1065A is 650 V.
  2. What is the current rating of the FFSP1065A?
    The current rating of the FFSP1065A is 10 A.
  3. What is the typical forward voltage drop of the FFSP1065A?
    The typical forward voltage drop is 1.35 V at 10 A.
  4. What is the maximum reverse leakage current of the FFSP1065A?
    The maximum reverse leakage current is 10 μA at 650 V.
  5. What is the operating junction temperature range of the FFSP1065A?
    The operating junction temperature range is -40°C to 175°C.
  6. What package type is the FFSP1065A available in?
    The FFSP1065A is available in the TO-247-3L package type.
  7. What are the key benefits of using SiC technology in the FFSP1065A?
    The key benefits include superior switching performance, higher reliability, and lower power losses compared to traditional silicon-based diodes.
  8. In which applications is the FFSP1065A commonly used?
    The FFSP1065A is commonly used in power factor correction circuits, DC-DC converters, motor drives, renewable energy systems, and electric vehicle charging systems.
  9. How does the FFSP1065A enhance efficiency in power conversion applications?
    The FFSP1065A enhances efficiency through its fast switching times and low forward voltage drop, reducing power losses and improving overall system performance.
  10. What is the thermal resistance of the FFSP1065A?
    The junction-to-case thermal resistance (RθJC) is 0.5 °C/W.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):15A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:575pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2L
Operating Temperature - Junction:-55°C ~ 175°C
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Part Number FFSP1065A FFSP2065A FFSP1265A FFSPF1065A FFSP1065B FFSP1665A FFSP3065A FFSB1065A FFSD1065A FFSM1065A
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 15A (DC) 25A (DC) 15A (DC) 10A (DC) 11A (DC) 16A (DC) 30A (DC) 14A (DC) 18A (DC) 11A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 20 A 1.75 V @ 12 A - 1.7 V @ 10 A 1.75 V @ 16 A 1.75 V @ 30 A 1.75 V @ 10 A 1.75 V @ 10 A 1.75 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns - - 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 40 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 575pF @ 1V, 100kHz 1085pF @ 1V, 100kHz 665pF @ 1V, 100kHz 575pF @ 1V, 100kHz 421pF @ 1V, 100kHz 887pF @ 1V, 100kHz 1705pF @ 1V, 100kHz 575pF @ 1V, 100kHz 575pF @ 1V, 100kHz 575pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Surface Mount Surface Mount Surface Mount
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 Full Pack TO-220-2 TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 4-PowerTSFN
Supplier Device Package TO-220-2L TO-220-2 TO-220-2L TO-220F-2FS TO-220-2 TO-220-2 TO-220-2L D²PAK-3 (TO-263-3) D-PAK (TO-252) 4-PQFN (8x8)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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