FFSP1265A
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onsemi FFSP1265A

Manufacturer No:
FFSP1265A
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY 650V 15A TO220-2L
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FFSP1265A is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This diode utilizes advanced SiC technology to offer superior switching performance and higher efficiency compared to traditional silicon diodes. It is designed for high-power applications where fast switching times and low losses are critical.

Key Specifications

ParameterValue
Voltage Rating (VDRM)650 V
Current Rating (IF)15 A
Forward Voltage Drop (VF)1.5 V @ 12 A
Maximum Junction Temperature (TJ)175°C
Avalanche Energy Rating72 mJ
Package TypeTO-220-2
RoHS ComplianceYes

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low forward voltage drop of 1.5 V at 12 A, reducing power losses.
  • Fast switching times due to the SiC technology.
  • Avalanche rated for robustness against transient conditions.
  • Maximum junction temperature of 175°C, allowing for operation in high-temperature environments.

Applications

The FFSP1265A SiC Schottky Diode is ideal for various high-power applications, including:

  • Power supplies and converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Electric vehicle charging infrastructure.
  • General-purpose high-power rectification.

Q & A

  1. What is the voltage rating of the FFSP1265A diode? The voltage rating of the FFSP1265A diode is 650 V.
  2. What is the current rating of the FFSP1265A diode? The current rating of the FFSP1265A diode is 15 A.
  3. What is the forward voltage drop of the FFSP1265A diode at 12 A? The forward voltage drop of the FFSP1265A diode at 12 A is 1.5 V.
  4. What is the maximum junction temperature of the FFSP1265A diode? The maximum junction temperature of the FFSP1265A diode is 175°C.
  5. Is the FFSP1265A diode avalanche rated? Yes, the FFSP1265A diode is avalanche rated with an energy rating of 72 mJ.
  6. What package type is the FFSP1265A diode available in? The FFSP1265A diode is available in the TO-220-2 package type.
  7. Is the FFSP1265A diode RoHS compliant? Yes, the FFSP1265A diode is RoHS compliant.
  8. What are some typical applications of the FFSP1265A diode? Typical applications include power supplies, motor drives, renewable energy systems, electric vehicle charging, and general-purpose high-power rectification.
  9. Why is SiC technology used in the FFSP1265A diode? SiC technology is used in the FFSP1265A diode to provide superior switching performance and higher efficiency compared to traditional silicon diodes.
  10. Where can I find detailed specifications for the FFSP1265A diode? Detailed specifications for the FFSP1265A diode can be found in the datasheet available on the onsemi website or through distributors like Mouser and LCSC.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):15A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 12 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:665pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2L
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSP1265A FFSP1665A FFSB1265A FFSM1265A FFSP1065A
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 15A (DC) 16A (DC) 14A (DC) 12.5A (DC) 15A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 12 A 1.75 V @ 16 A 1.75 V @ 12 A 1.75 V @ 12 A 1.75 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 665pF @ 1V, 100kHz 887pF @ 1V, 100kHz 665pF @ 1V, 100kHz 665pF @ 1V, 100kHz 575pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole Surface Mount Surface Mount Through Hole
Package / Case TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 4-PowerTSFN TO-220-2
Supplier Device Package TO-220-2L TO-220-2 D²PAK-3 (TO-263-3) 4-PQFN (8x8) TO-220-2L
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -65°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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