FDV303N-F169
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onsemi FDV303N-F169

Manufacturer No:
FDV303N-F169
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 680MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The FDV303N-F169 is an N-Channel MOSFET produced by onsemi, designed for small signal applications. This device is notable for its excellent on-state resistance, even at low gate drive voltages such as 2.5 volts. Although it is currently listed as obsolete, it was widely used in various electronic circuits requiring low power and high efficiency.

Key Specifications

Parameter Value Unit
Type N-Channel MOSFET
Voltage Rating (Vds) 25 V
Current Rating (Id) 680 mA
Power Dissipation (Pd) 350 mW
Package Type SOT-23-3
Gate Drive Voltage 2.5 V

Key Features

The FDV303N-F169 features excellent on-state resistance, making it efficient for low power applications. It operates with a low gate drive voltage of 2.5 volts, which is beneficial for battery-powered devices and other low-voltage systems. The SOT-23-3 package is compact and suitable for surface mount technology, allowing for dense circuit designs.

Applications

The FDV303N-F169 is suitable for a variety of small signal applications, including but not limited to:

  • Battery-powered devices
  • Low-voltage switching circuits
  • Audio and signal processing circuits
  • Portable electronics

Q & A

  1. What is the voltage rating of the FDV303N-F169 MOSFET?

    The voltage rating (Vds) of the FDV303N-F169 is 25 volts.

  2. What is the current rating of the FDV303N-F169 MOSFET?

    The current rating (Id) of the FDV303N-F169 is 680 mA.

  3. What is the power dissipation of the FDV303N-F169 MOSFET?

    The power dissipation (Pd) of the FDV303N-F169 is 350 mW.

  4. What package type does the FDV303N-F169 use?

    The FDV303N-F169 uses the SOT-23-3 package type.

  5. Is the FDV303N-F169 still in production?

    No, the FDV303N-F169 is currently listed as obsolete and is no longer manufactured.

  6. What is the minimum gate drive voltage for the FDV303N-F169?

    The minimum gate drive voltage for the FDV303N-F169 is 2.5 volts.

  7. What are some typical applications for the FDV303N-F169?

    Typical applications include battery-powered devices, low-voltage switching circuits, audio and signal processing circuits, and portable electronics.

  8. Why is the FDV303N-F169 suitable for low power applications?

    The FDV303N-F169 is suitable for low power applications due to its excellent on-state resistance and low gate drive voltage requirements.

  9. What are the benefits of the SOT-23-3 package used by the FDV303N-F169?

    The SOT-23-3 package is compact and suitable for surface mount technology, allowing for dense circuit designs.

  10. Where can I find detailed specifications for the FDV303N-F169?

    Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.3 nC @ 4.5 V
Vgs (Max):8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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