FDV303N-F169
  • Share:

onsemi FDV303N-F169

Manufacturer No:
FDV303N-F169
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 680MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDV303N-F169 is an N-Channel MOSFET produced by onsemi, designed for small signal applications. This device is notable for its excellent on-state resistance, even at low gate drive voltages such as 2.5 volts. Although it is currently listed as obsolete, it was widely used in various electronic circuits requiring low power and high efficiency.

Key Specifications

Parameter Value Unit
Type N-Channel MOSFET
Voltage Rating (Vds) 25 V
Current Rating (Id) 680 mA
Power Dissipation (Pd) 350 mW
Package Type SOT-23-3
Gate Drive Voltage 2.5 V

Key Features

The FDV303N-F169 features excellent on-state resistance, making it efficient for low power applications. It operates with a low gate drive voltage of 2.5 volts, which is beneficial for battery-powered devices and other low-voltage systems. The SOT-23-3 package is compact and suitable for surface mount technology, allowing for dense circuit designs.

Applications

The FDV303N-F169 is suitable for a variety of small signal applications, including but not limited to:

  • Battery-powered devices
  • Low-voltage switching circuits
  • Audio and signal processing circuits
  • Portable electronics

Q & A

  1. What is the voltage rating of the FDV303N-F169 MOSFET?

    The voltage rating (Vds) of the FDV303N-F169 is 25 volts.

  2. What is the current rating of the FDV303N-F169 MOSFET?

    The current rating (Id) of the FDV303N-F169 is 680 mA.

  3. What is the power dissipation of the FDV303N-F169 MOSFET?

    The power dissipation (Pd) of the FDV303N-F169 is 350 mW.

  4. What package type does the FDV303N-F169 use?

    The FDV303N-F169 uses the SOT-23-3 package type.

  5. Is the FDV303N-F169 still in production?

    No, the FDV303N-F169 is currently listed as obsolete and is no longer manufactured.

  6. What is the minimum gate drive voltage for the FDV303N-F169?

    The minimum gate drive voltage for the FDV303N-F169 is 2.5 volts.

  7. What are some typical applications for the FDV303N-F169?

    Typical applications include battery-powered devices, low-voltage switching circuits, audio and signal processing circuits, and portable electronics.

  8. Why is the FDV303N-F169 suitable for low power applications?

    The FDV303N-F169 is suitable for low power applications due to its excellent on-state resistance and low gate drive voltage requirements.

  9. What are the benefits of the SOT-23-3 package used by the FDV303N-F169?

    The SOT-23-3 package is compact and suitable for surface mount technology, allowing for dense circuit designs.

  10. Where can I find detailed specifications for the FDV303N-F169?

    Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.3 nC @ 4.5 V
Vgs (Max):8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
330

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK