FDS6681Z
  • Share:

onsemi FDS6681Z

Manufacturer No:
FDS6681Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 20A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS6681Z is a P-Channel PowerTrench MOSFET produced by onsemi. This device is fabricated using onsemi’s advanced PowerTrench process, which is designed to minimize on-state resistance. The FDS6681Z is well-suited for power management and load switching applications, particularly in notebook computers and portable battery packs.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -30 V
Gate-Source Voltage (VGSS) ±25 V
Continuous Drain Current (ID) -20 A
Pulsed Drain Current (ID) -105 A
Power Dissipation (PD) 2.5 (Note 1a), 1.2 (Note 1b), 1.0 (Note 1c) W
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (RθJA) 50 °C/W °C/W
Thermal Resistance, Junction-to-Case (RθJC) 25 °C/W °C/W
Static Drain-Source On-Resistance (RDS(ON)) at VGS = -10 V 4.6 mΩ
Static Drain-Source On-Resistance (RDS(ON)) at VGS = -4.5 V 6.5 mΩ

Key Features

  • High Performance Trench Technology for extremely low RDS(ON)
  • Extended VGSS Range (-25 V) for battery applications
  • HBM ESD Protection Level of 8 kV typical
  • High power and current handling capability
  • Lead-free and RoHS compliant
  • Pb-free and halide-free device
  • Small gate charge (QG) and small reverse recovery charge (Qrr) for fast switching
  • Soft reverse recovery body diode suitable for synchronous rectification in AC/DC power supplies

Applications

  • Power management in notebook computers
  • Load switching applications in portable battery packs
  • Synchronous rectification in AC/DC power supplies

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDS6681Z?

    The maximum drain-source voltage (VDSS) is -30 V.

  2. What is the continuous drain current (ID) rating of the FDS6681Z?

    The continuous drain current (ID) rating is -20 A.

  3. What is the thermal resistance, junction-to-ambient (RθJA), of the FDS6681Z?

    The thermal resistance, junction-to-ambient (RθJA), is 50 °C/W.

  4. Is the FDS6681Z RoHS compliant?

    Yes, the FDS6681Z is lead-free and RoHS compliant.

  5. What are the typical applications of the FDS6681Z?

    The FDS6681Z is typically used in power management in notebook computers, load switching in portable battery packs, and synchronous rectification in AC/DC power supplies.

  6. What is the gate-source voltage range (VGSS) of the FDS6681Z?

    The gate-source voltage range (VGSS) is ±25 V.

  7. Does the FDS6681Z have ESD protection?

    Yes, the FDS6681Z has an HBM ESD protection level of 8 kV typical.

  8. What is the static drain-source on-resistance (RDS(ON)) at VGS = -10 V?

    The static drain-source on-resistance (RDS(ON)) at VGS = -10 V is 4.6 mΩ.

  9. Is the FDS6681Z suitable for high power and current handling?

    Yes, the FDS6681Z has high power and current handling capability.

  10. What is the package type of the FDS6681Z?

    The FDS6681Z is available in an SOIC8 package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:7540 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$1.95
465

Please send RFQ , we will respond immediately.

Related Product By Categories

CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP