FDS6681Z
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onsemi FDS6681Z

Manufacturer No:
FDS6681Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 20A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS6681Z is a P-Channel PowerTrench MOSFET produced by onsemi. This device is fabricated using onsemi’s advanced PowerTrench process, which is designed to minimize on-state resistance. The FDS6681Z is well-suited for power management and load switching applications, particularly in notebook computers and portable battery packs.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -30 V
Gate-Source Voltage (VGSS) ±25 V
Continuous Drain Current (ID) -20 A
Pulsed Drain Current (ID) -105 A
Power Dissipation (PD) 2.5 (Note 1a), 1.2 (Note 1b), 1.0 (Note 1c) W
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (RθJA) 50 °C/W °C/W
Thermal Resistance, Junction-to-Case (RθJC) 25 °C/W °C/W
Static Drain-Source On-Resistance (RDS(ON)) at VGS = -10 V 4.6 mΩ
Static Drain-Source On-Resistance (RDS(ON)) at VGS = -4.5 V 6.5 mΩ

Key Features

  • High Performance Trench Technology for extremely low RDS(ON)
  • Extended VGSS Range (-25 V) for battery applications
  • HBM ESD Protection Level of 8 kV typical
  • High power and current handling capability
  • Lead-free and RoHS compliant
  • Pb-free and halide-free device
  • Small gate charge (QG) and small reverse recovery charge (Qrr) for fast switching
  • Soft reverse recovery body diode suitable for synchronous rectification in AC/DC power supplies

Applications

  • Power management in notebook computers
  • Load switching applications in portable battery packs
  • Synchronous rectification in AC/DC power supplies

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDS6681Z?

    The maximum drain-source voltage (VDSS) is -30 V.

  2. What is the continuous drain current (ID) rating of the FDS6681Z?

    The continuous drain current (ID) rating is -20 A.

  3. What is the thermal resistance, junction-to-ambient (RθJA), of the FDS6681Z?

    The thermal resistance, junction-to-ambient (RθJA), is 50 °C/W.

  4. Is the FDS6681Z RoHS compliant?

    Yes, the FDS6681Z is lead-free and RoHS compliant.

  5. What are the typical applications of the FDS6681Z?

    The FDS6681Z is typically used in power management in notebook computers, load switching in portable battery packs, and synchronous rectification in AC/DC power supplies.

  6. What is the gate-source voltage range (VGSS) of the FDS6681Z?

    The gate-source voltage range (VGSS) is ±25 V.

  7. Does the FDS6681Z have ESD protection?

    Yes, the FDS6681Z has an HBM ESD protection level of 8 kV typical.

  8. What is the static drain-source on-resistance (RDS(ON)) at VGS = -10 V?

    The static drain-source on-resistance (RDS(ON)) at VGS = -10 V is 4.6 mΩ.

  9. Is the FDS6681Z suitable for high power and current handling?

    Yes, the FDS6681Z has high power and current handling capability.

  10. What is the package type of the FDS6681Z?

    The FDS6681Z is available in an SOIC8 package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:7540 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$1.95
465

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