Overview
The FDS4685 is a 40V P-Channel PowerTrench® MOSFET produced by onsemi. This device is a rugged gate version of onsemi’s advanced PowerTrench process, optimized for power management applications that require a wide range of gate drive voltage ratings (4.5V – 20V). It is designed to offer high performance, fast switching speeds, and low on-resistance, making it suitable for various power management and switching applications.
Key Specifications
| Parameter | Rating/Value | Units |
|---|---|---|
| Drain-Source Voltage (VDSS) | -40 | V |
| Gate-Source Voltage (VGSS) | ±20 | V |
| Continuous Drain Current (ID) | -8.2 | A |
| Pulsed Drain Current (ID) | -50 | A |
| Power Dissipation (PD) | 2.5 (Note 1a), 1.4 (Note 1b), 1.2 (Note 1c) | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 50 (Note 1a), 125 (Note 1c) | °C/W |
| Thermal Resistance, Junction-to-Case (RθJC) | 25 | °C/W |
| Static Drain-Source On-Resistance (RDS(ON)) @ VGS = -10 V, ID = -8.2 A | 0.027 | Ω |
| Static Drain-Source On-Resistance (RDS(ON)) @ VGS = -4.5 V, ID = -7 A | 0.035 | Ω |
| Gate Threshold Voltage (VGS(th)) | -1 to -3 | V |
| Total Gate Charge (Qg) | 19 nC | nC |
Key Features
- High performance trench technology for extremely low RDS(ON)
- Fast switching speed
- High power and current handling capability
- RDS(ON) = 0.027 Ω @ VGS = –10 V, ID = –8.2 A
- RDS(ON) = 0.035 Ω @ VGS = –4.5 V, ID = –7 A
- Optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V)
Applications
- Power management
- Load switch
- Battery protection
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDS4685 MOSFET?
The maximum drain-source voltage (VDSS) is -40 V.
- What is the continuous drain current (ID) rating of the FDS4685?
The continuous drain current (ID) rating is -8.2 A.
- What is the typical on-resistance (RDS(ON)) of the FDS4685 at VGS = -10 V and ID = -8.2 A?
The typical on-resistance (RDS(ON)) is 0.027 Ω.
- What are the typical applications of the FDS4685 MOSFET?
The typical applications include power management, load switch, and battery protection.
- What is the gate threshold voltage (VGS(th)) range of the FDS4685?
The gate threshold voltage (VGS(th)) range is -1 to -3 V.
- What is the total gate charge (Qg) of the FDS4685?
The total gate charge (Qg) is 19 nC.
- What is the thermal resistance, junction-to-ambient (RθJA), of the FDS4685 when mounted on a specific pad?
The thermal resistance, junction-to-ambient (RθJA), can be 50°C/W or 125°C/W depending on the mounting conditions.
- Is the FDS4685 suitable for use in life support systems or FDA Class 3 medical devices?
No, the FDS4685 is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
- What is the package type and mounting method of the FDS4685?
The package type is SOIC-8, and the mounting method is surface mount.
- What is the operating and storage junction temperature range of the FDS4685?
The operating and storage junction temperature range is -55 to +150°C.
