FDN86246
  • Share:

onsemi FDN86246

Manufacturer No:
FDN86246
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 1.6A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN86246 is an N-Channel PowerTrench® MOSFET produced by onsemi, utilizing an advanced Power Trench® process. This technology is optimized for low on-state resistance (rDS(on)), enhanced switching performance, and ruggedness. The MOSFET is suitable for a wide range of general usage applications, including power switching and high-performance requirements.

Key Specifications

ParameterValue
Channel PolarityN-Channel
Drain-Source Voltage (VDSS)150 V
On-State Resistance (rDS(on)) at VGS = 10 V, ID = 1.6 A261 mΩ
On-State Resistance (rDS(on)) at VGS = 6 V, ID = 1.4 A359 mΩ
Gate-Source Voltage (VGS)±20 V
Threshold Voltage (Vgs(th))4 V
Maximum Drain Current (Id)1.6 A
Maximum Power Dissipation (PD)1.5 W
Package TypeSOT-23-3
Operating Temperature Range-55°C to 150°C

Key Features

  • High Performance Trench Technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package (SOT-23-3)
  • Fast switching speed
  • 100% UIL tested
  • RoHS compliant

Applications

The FDN86246 MOSFET is versatile and suitable for various applications, including power switching, DC-DC converters, motor control, and general-purpose power management. Its high performance and ruggedness make it ideal for use in automotive, industrial, and consumer electronics.

Q & A

  1. What is the maximum drain-source voltage of the FDN86246 MOSFET?
    The maximum drain-source voltage (VDSS) is 150 V.
  2. What is the on-state resistance (rDS(on)) at VGS = 10 V and ID = 1.6 A?
    The on-state resistance is 261 mΩ.
  3. What is the package type of the FDN86246 MOSFET?
    The package type is SOT-23-3.
  4. Is the FDN86246 MOSFET RoHS compliant?
    Yes, the FDN86246 is RoHS compliant.
  5. What are the key features of the FDN86246 MOSFET?
    Key features include high performance trench technology, high power and current handling, fast switching speed, and 100% UIL testing.
  6. What are some typical applications for the FDN86246 MOSFET?
    Typical applications include power switching, DC-DC converters, motor control, and general-purpose power management in automotive, industrial, and consumer electronics.
  7. What is the maximum drain current (Id) of the FDN86246 MOSFET?
    The maximum drain current is 1.6 A.
  8. What is the threshold voltage (Vgs(th)) of the FDN86246 MOSFET?
    The threshold voltage is 4 V.
  9. Is the FDN86246 MOSFET suitable for high-temperature applications?
    Yes, it operates within a temperature range of -55°C to 150°C.
  10. Where can I find more detailed specifications and resources for the FDN86246 MOSFET?
    More detailed specifications and resources can be found on the onsemi website and through distributors like Mouser and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:261mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$1.40
359

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE