FDN86246
  • Share:

onsemi FDN86246

Manufacturer No:
FDN86246
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 1.6A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN86246 is an N-Channel PowerTrench® MOSFET produced by onsemi, utilizing an advanced Power Trench® process. This technology is optimized for low on-state resistance (rDS(on)), enhanced switching performance, and ruggedness. The MOSFET is suitable for a wide range of general usage applications, including power switching and high-performance requirements.

Key Specifications

ParameterValue
Channel PolarityN-Channel
Drain-Source Voltage (VDSS)150 V
On-State Resistance (rDS(on)) at VGS = 10 V, ID = 1.6 A261 mΩ
On-State Resistance (rDS(on)) at VGS = 6 V, ID = 1.4 A359 mΩ
Gate-Source Voltage (VGS)±20 V
Threshold Voltage (Vgs(th))4 V
Maximum Drain Current (Id)1.6 A
Maximum Power Dissipation (PD)1.5 W
Package TypeSOT-23-3
Operating Temperature Range-55°C to 150°C

Key Features

  • High Performance Trench Technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package (SOT-23-3)
  • Fast switching speed
  • 100% UIL tested
  • RoHS compliant

Applications

The FDN86246 MOSFET is versatile and suitable for various applications, including power switching, DC-DC converters, motor control, and general-purpose power management. Its high performance and ruggedness make it ideal for use in automotive, industrial, and consumer electronics.

Q & A

  1. What is the maximum drain-source voltage of the FDN86246 MOSFET?
    The maximum drain-source voltage (VDSS) is 150 V.
  2. What is the on-state resistance (rDS(on)) at VGS = 10 V and ID = 1.6 A?
    The on-state resistance is 261 mΩ.
  3. What is the package type of the FDN86246 MOSFET?
    The package type is SOT-23-3.
  4. Is the FDN86246 MOSFET RoHS compliant?
    Yes, the FDN86246 is RoHS compliant.
  5. What are the key features of the FDN86246 MOSFET?
    Key features include high performance trench technology, high power and current handling, fast switching speed, and 100% UIL testing.
  6. What are some typical applications for the FDN86246 MOSFET?
    Typical applications include power switching, DC-DC converters, motor control, and general-purpose power management in automotive, industrial, and consumer electronics.
  7. What is the maximum drain current (Id) of the FDN86246 MOSFET?
    The maximum drain current is 1.6 A.
  8. What is the threshold voltage (Vgs(th)) of the FDN86246 MOSFET?
    The threshold voltage is 4 V.
  9. Is the FDN86246 MOSFET suitable for high-temperature applications?
    Yes, it operates within a temperature range of -55°C to 150°C.
  10. Where can I find more detailed specifications and resources for the FDN86246 MOSFET?
    More detailed specifications and resources can be found on the onsemi website and through distributors like Mouser and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:261mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$1.40
359

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK

Related Product By Brand

MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5