FDN86246
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onsemi FDN86246

Manufacturer No:
FDN86246
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 1.6A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN86246 is an N-Channel PowerTrench® MOSFET produced by onsemi, utilizing an advanced Power Trench® process. This technology is optimized for low on-state resistance (rDS(on)), enhanced switching performance, and ruggedness. The MOSFET is suitable for a wide range of general usage applications, including power switching and high-performance requirements.

Key Specifications

ParameterValue
Channel PolarityN-Channel
Drain-Source Voltage (VDSS)150 V
On-State Resistance (rDS(on)) at VGS = 10 V, ID = 1.6 A261 mΩ
On-State Resistance (rDS(on)) at VGS = 6 V, ID = 1.4 A359 mΩ
Gate-Source Voltage (VGS)±20 V
Threshold Voltage (Vgs(th))4 V
Maximum Drain Current (Id)1.6 A
Maximum Power Dissipation (PD)1.5 W
Package TypeSOT-23-3
Operating Temperature Range-55°C to 150°C

Key Features

  • High Performance Trench Technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package (SOT-23-3)
  • Fast switching speed
  • 100% UIL tested
  • RoHS compliant

Applications

The FDN86246 MOSFET is versatile and suitable for various applications, including power switching, DC-DC converters, motor control, and general-purpose power management. Its high performance and ruggedness make it ideal for use in automotive, industrial, and consumer electronics.

Q & A

  1. What is the maximum drain-source voltage of the FDN86246 MOSFET?
    The maximum drain-source voltage (VDSS) is 150 V.
  2. What is the on-state resistance (rDS(on)) at VGS = 10 V and ID = 1.6 A?
    The on-state resistance is 261 mΩ.
  3. What is the package type of the FDN86246 MOSFET?
    The package type is SOT-23-3.
  4. Is the FDN86246 MOSFET RoHS compliant?
    Yes, the FDN86246 is RoHS compliant.
  5. What are the key features of the FDN86246 MOSFET?
    Key features include high performance trench technology, high power and current handling, fast switching speed, and 100% UIL testing.
  6. What are some typical applications for the FDN86246 MOSFET?
    Typical applications include power switching, DC-DC converters, motor control, and general-purpose power management in automotive, industrial, and consumer electronics.
  7. What is the maximum drain current (Id) of the FDN86246 MOSFET?
    The maximum drain current is 1.6 A.
  8. What is the threshold voltage (Vgs(th)) of the FDN86246 MOSFET?
    The threshold voltage is 4 V.
  9. Is the FDN86246 MOSFET suitable for high-temperature applications?
    Yes, it operates within a temperature range of -55°C to 150°C.
  10. Where can I find more detailed specifications and resources for the FDN86246 MOSFET?
    More detailed specifications and resources can be found on the onsemi website and through distributors like Mouser and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:261mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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