FDMS7650DC
  • Share:

onsemi FDMS7650DC

Manufacturer No:
FDMS7650DC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 47A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS7650DC is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process and DUAL COOL package technology. This device is designed to offer the lowest on-resistance (rDS(on)) while maintaining excellent switching performance and thermal management. It is Pb-free and RoHS compliant, making it suitable for a wide range of applications that require high efficiency and reliability.

Key Specifications

Parameter Rating Unit
VDS (Drain to Source Voltage) 30 V
VGS (Gate to Source Voltage) +20 V
ID (Drain Current - Continuous, Package limited) 100 A
ID (Drain Current - Continuous, Silicon limited) 289 A
rDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 36 A) 0.99 mΩ
rDS(on) (Static Drain to Source On Resistance at VGS = 4.5 V, ID = 32 A) 1.55 mΩ
TJ, TSTG (Operating and Storage Junction Temperature Range) -55 to +150 °C °C
RθJA (Thermal Resistance, Junction to Ambient) 38 °C/W (Note 1a) °C/W

Key Features

  • DUAL COOL Top Side Cooling PQFN package for enhanced thermal performance.
  • High performance technology for extremely low rDS(on).
  • Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A.
  • Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A.
  • Pb-free and RoHS compliant.
  • Excellent switching performance with low Junction-to-Ambient thermal resistance.

Applications

The FDMS7650DC is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial automation and control systems.
  • Electric vehicles and hybrid vehicles.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMS7650DC?

    The maximum drain to source voltage (VDS) is 30 V.

  2. What is the maximum continuous drain current (ID) for the FDMS7650DC?

    The maximum continuous drain current (ID) is 100 A (package limited) and 289 A (silicon limited) at TC = 25°C.

  3. What is the typical on-resistance (rDS(on)) of the FDMS7650DC at VGS = 10 V and ID = 36 A?

    The typical on-resistance (rDS(on)) is 0.99 mΩ at VGS = 10 V and ID = 36 A.

  4. Is the FDMS7650DC Pb-free and RoHS compliant?
  5. What is the operating and storage junction temperature range for the FDMS7650DC?

    The operating and storage junction temperature range is -55 to +150 °C.

  6. What is the thermal resistance (RθJA) of the FDMS7650DC when mounted on a specified pad?

    The thermal resistance (RθJA) is 38 °C/W when mounted on a 1 in^2 pad of 2 oz copper.

  7. What package type is used for the FDMS7650DC?

    The FDMS7650DC uses a DUAL COOL Top Side Cooling PQFN package.

  8. What are some typical applications for the FDMS7650DC?

    Typical applications include power supplies, DC-DC converters, motor control systems, renewable energy systems, industrial automation, and electric vehicles.

  9. How does the DUAL COOL package enhance the performance of the FDMS7650DC?

    The DUAL COOL package enhances thermal performance by providing top side cooling, which helps in maintaining low Junction-to-Ambient thermal resistance.

  10. What is the gate to source threshold voltage (VGS(th)) of the FDMS7650DC?

    The gate to source threshold voltage (VGS(th)) is between 1.1 V and 2.7 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:47A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.99mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:206 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14765 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$5.32
170

Please send RFQ , we will respond immediately.

Related Product By Categories

FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK

Related Product By Brand

MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB