Overview
The FDMS4435BZ is a P-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench process. This technology is specifically designed to minimize the on-state resistance, making the device highly efficient for various power management and load switching applications. The MOSFET is particularly suited for use in notebook computers and portable battery packs due to its high performance and low RDS(on) characteristics.
Key Specifications
| Symbol | Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS | Drain to Source Voltage | -30 | V | ||
| VGS | Gate to Source Voltage | ±25 | V | ||
| ID | Drain Current - Continuous | -8.8 | A | ||
| ID | Drain Current - Pulsed | -50 | A | ||
| PD | Power Dissipation | 2.5 | W | ||
| RDS(on) | Static Drain to Source On Resistance | 16 | 20 | mΩ (VGS = -10 V, ID = -8.8 A) | |
| RDS(on) | Static Drain to Source On Resistance | 26 | 35 | mΩ (VGS = -4.5 V, ID = -6.7 A) | |
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 | 150 | °C |
Key Features
- Low On-State Resistance: The FDMS4435BZ features a low RDS(on) of 20 mΩ at VGS = -10 V and ID = -8.8 A, and 35 mΩ at VGS = -4.5 V and ID = -6.7 A, enhancing its efficiency in power management applications.
- Extended VGSS Range: The device has an extended gate to source voltage range of ±25 V, making it suitable for battery applications.
- HBM ESD Protection: It offers high ESD protection with a Human Body Model (HBM) rating of ±3.8 kV.
- High Performance Trench Technology: Utilizes onsemi’s advanced PowerTrench process for extremely low RDS(on) and high power handling capability.
- Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS standards.
Applications
The FDMS4435BZ is well-suited for various applications, including:
- Power Management: Ideal for power management in electronic devices due to its low on-state resistance and high efficiency.
- Load Switching: Suitable for load switching applications in notebook computers and other portable electronics.
- Portable Battery Packs: Used in battery management systems for portable battery packs due to its extended VGSS range and low RDS(on).
Q & A
- What is the maximum drain to source voltage for the FDMS4435BZ?
The maximum drain to source voltage (VDS) is -30 V.
- What is the typical on-state resistance (RDS(on)) at VGS = -10 V and ID = -8.8 A?
The typical RDS(on) is 20 mΩ.
- What is the extended gate to source voltage range for this MOSFET?
The extended gate to source voltage range (VGSS) is ±25 V.
- Does the FDMS4435BZ have ESD protection?
Yes, it has HBM ESD protection with a rating of ±3.8 kV.
- Is the FDMS4435BZ Pb-Free and RoHS compliant?
Yes, the device is lead-free and RoHS compliant.
- What are the typical applications for the FDMS4435BZ?
It is typically used in power management, load switching, and portable battery packs.
- What is the maximum continuous drain current for the FDMS4435BZ at TA = 25°C?
The maximum continuous drain current (ID) is -8.8 A.
- What is the thermal resistance, junction to case (RJC) for this MOSFET?
The thermal resistance, junction to case (RJC) is 25 °C/W.
- What is the operating and storage junction temperature range for the FDMS4435BZ?
The operating and storage junction temperature range (TJ, TSTG) is -55 to 150 °C.
- What is the forward transconductance (gFS) at VDS = -5 V and ID = -8.8 A?
The forward transconductance (gFS) is 24 S.
