Overview
The FDH45N50F-F133 is a high-voltage N-Channel MOSFET from onsemi, part of their UniFET™ and FRFET® family. This device is designed to reduce on-state resistance, enhance switching performance, and increase avalanche energy strength. It utilizes planar stripe and DMOS technology, making it suitable for various high-power applications. The MOSFET features an improved body diode with enhanced reverse recovery performance, contributing to system reliability and efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 500 | V |
| Continuous Drain Current (ID) | 45 A (at TC = 25°C), 28.4 A (at TC = 100°C) | A |
| Pulsed Drain Current (IDM) | 180 | A |
| Gate-Source Voltage (VGSS) | ±30 | V |
| Static Drain-Source On-Resistance (RDS(on)) | 0.105 Ω (Typ.) @ VGS = 10 V, ID = 22.5 A | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Total Gate Charge (Qg) | 105 nC (Typ.) @ VDS = 400 V, ID = 48 A, VGS = 10 V | nC |
| Thermal Resistance, Junction to Case (RθJC) | 0.2 °C/W | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 40 °C/W | °C/W |
| Operating and Storage Temperature Range | -55 to +150 °C | °C |
Key Features
- Low on-state resistance (RDS(on) = 0.105 Ω Typ. @ VGS = 10 V, ID = 22.5 A)
- Low gate charge (Typ. 105 nC)
- Low Crss (Typ. 62 pF)
- 100% Avalanche tested
- Enhanced body diode reverse recovery performance (trr < 100 nsec, dv/dt immunity = 15 V/ns)
- Pb-free, halogen-free/BFR-free, and RoHS compliant
Applications
- Switching power converter applications such as power factor correction (PFC)
- Flat panel display (FPD) TV power
- ATX power supplies
- Electronic lamp ballasts
- Lighting systems
- Uninterruptible power supply (UPS)
- AC-DC power supplies
Q & A
- What is the maximum drain to source voltage of the FDH45N50F-F133 MOSFET?
The maximum drain to source voltage (VDS) is 500 V. - What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current (ID) is 45 A at 25°C and 28.4 A at 100°C. - What is the typical on-state resistance of the FDH45N50F-F133?
The typical on-state resistance (RDS(on)) is 0.105 Ω at VGS = 10 V and ID = 22.5 A. - What are the thermal resistance values for this MOSFET?
The thermal resistance from junction to case (RθJC) is 0.2 °C/W, and from junction to ambient (RθJA) is 40 °C/W. - Is the FDH45N50F-F133 MOSFET RoHS compliant?
Yes, the FDH45N50F-F133 is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What are some of the key applications for this MOSFET?
Key applications include switching power converter applications, PFC, FPD TV power, ATX power supplies, electronic lamp ballasts, lighting systems, UPS, and AC-DC power supplies. - What is the gate threshold voltage range for this MOSFET?
The gate threshold voltage (VGS(th)) range is 3 to 5 V. - How does the body diode performance of the FDH45N50F-F133 compare to other MOSFETs?
The body diode of the FDH45N50F-F133 has enhanced reverse recovery performance with a trr less than 100 nsec and dv/dt immunity of 15 V/ns, which is better than typical planar MOSFETs. - What is the maximum pulsed drain current rating for this MOSFET?
The maximum pulsed drain current (IDM) is 180 A. - What is the operating and storage temperature range for the FDH45N50F-F133?
The operating and storage temperature range is -55 to +150 °C.
