FDG8842CZ
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onsemi FDG8842CZ

Manufacturer No:
FDG8842CZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 30V/25V SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDG8842CZ is a dual MOSFET device produced by onsemi, designed for low voltage applications. It serves as a replacement for bipolar digital transistors and small signal MOSFETs. This device is particularly suited for applications where complementary N and P-channel MOSFETs are required. However, it is important to note that the FDG8842CZ is currently obsolete and not in production.

Key Specifications

ParameterValue
ConfigurationN and P-Channel
Drain to Source Voltage (Vdss)30V (N-Channel), 25V (P-Channel)
Continuous Drain Current (Id)750 mA
On-Resistance (Rds(on))0.25 Ω (N-Channel), 0.41 Ω (P-Channel) at Vgs = 4.5V
PackageSOT-323-6L
Power Dissipation (Pd)300 mW
Threshold Voltage (Vth)650 mV

Key Features

  • Complementary N and P-channel MOSFETs in a single package
  • Logic Level Gate for easy interface with digital circuits
  • Low on-resistance for efficient switching
  • Compact SOT-323-6L package for space-saving designs
  • Suitable for low voltage applications

Applications

The FDG8842CZ is suitable for a variety of low voltage applications, including but not limited to:

  • Digital circuits requiring complementary MOSFETs
  • Low power switching and amplification
  • Portable electronics and battery-powered devices
  • Automotive and industrial control systems

Q & A

  1. What is the configuration of the FDG8842CZ MOSFET? The FDG8842CZ is a dual MOSFET with N and P-channel configurations.
  2. What is the maximum drain to source voltage for the N and P-channels? The maximum drain to source voltage is 30V for the N-channel and 25V for the P-channel.
  3. What is the continuous drain current rating for this MOSFET? The continuous drain current rating is 750 mA.
  4. What is the on-resistance of the FDG8842CZ? The on-resistance is 0.25 Ω for the N-channel and 0.41 Ω for the P-channel at Vgs = 4.5V.
  5. In what package is the FDG8842CZ available? The FDG8842CZ is available in the SOT-323-6L package.
  6. What is the power dissipation rating of this MOSFET? The power dissipation rating is 300 mW.
  7. Is the FDG8842CZ still in production? No, the FDG8842CZ is currently obsolete and not in production.
  8. What are some typical applications for the FDG8842CZ? Typical applications include digital circuits, low power switching, portable electronics, and automotive and industrial control systems.
  9. What is the threshold voltage for the FDG8842CZ? The threshold voltage is 650 mV.
  10. Why is the FDG8842CZ used in place of bipolar digital transistors? The FDG8842CZ is used for its superior performance in low voltage applications and its ability to act as a replacement for bipolar digital transistors and small signal MOSFETs.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V, 25V
Current - Continuous Drain (Id) @ 25°C:750mA, 410mA
Rds On (Max) @ Id, Vgs:400mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:120pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
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In Stock

$0.61
499

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