Overview
The FDD13AN06A0-F085 is a high-performance N-Channel PowerTrench MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. With its robust construction and advanced features, the FDD13AN06A0-F085 is an excellent choice for engineers looking to optimize their designs for efficiency and reliability.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 50 A |
| rDS(ON) - On-Resistance | 13.5 mΩ (Typ.), VGS = 10V, ID = 50A |
| Qg(tot) - Total Gate Charge | 115 nC (Typ.) |
| Package Type | TO-252 |
Key Features
- Low on-resistance (rDS(ON)) of 13.5 mΩ at VGS = 10V and ID = 50A, ensuring minimal power loss during operation.
- High continuous drain current (Id) of 50 A, making it suitable for high-power applications.
- Drain-source breakdown voltage (Vds) of 60 V, providing robust protection against voltage spikes.
- Dual-protected with temperature and current limit features, enhancing device reliability and safety.
- TO-252 package, offering a compact and efficient form factor for various design needs.
Applications
The FDD13AN06A0-F085 MOSFET is versatile and can be used in a wide range of applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Automotive systems, such as battery management and power steering.
- Industrial control systems, including power inverters and switch-mode power supplies.
- Consumer electronics, such as power management in laptops and other portable devices.
Q & A
- What is the drain-source breakdown voltage of the FDD13AN06A0-F085?
The drain-source breakdown voltage (Vds) is 60 V. - What is the continuous drain current rating of this MOSFET?
The continuous drain current (Id) is 50 A. - What is the typical on-resistance of the FDD13AN06A0-F085?
The typical on-resistance (rDS(ON)) is 13.5 mΩ at VGS = 10V and ID = 50A. - What package type is the FDD13AN06A0-F085 available in?
The FDD13AN06A0-F085 is available in the TO-252 package. - Does the FDD13AN06A0-F085 have any built-in protection features?
Yes, it is dual-protected with temperature and current limit features. - What are some common applications for the FDD13AN06A0-F085?
Common applications include power supplies, motor control systems, automotive systems, industrial control systems, and consumer electronics. - What is the total gate charge (Qg(tot)) of the FDD13AN06A0-F085?
The total gate charge (Qg(tot)) is typically 115 nC. - Is the FDD13AN06A0-F085 RoHS compliant?
Yes, the FDD13AN06A0-F085 is RoHS compliant. - Where can I find detailed specifications and datasheets for the FDD13AN06A0-F085?
Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Mouser Electronics. - What are the benefits of using the FDD13AN06A0-F085 in power management applications?
The benefits include low on-resistance, high current handling, and built-in protection features, which enhance efficiency and reliability.
