FDD13AN06A0-F085
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onsemi FDD13AN06A0-F085

Manufacturer No:
FDD13AN06A0-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 9.9A/50A TO252AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD13AN06A0-F085 is a high-performance N-Channel PowerTrench MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. With its robust construction and advanced features, the FDD13AN06A0-F085 is an excellent choice for engineers looking to optimize their designs for efficiency and reliability.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current50 A
rDS(ON) - On-Resistance13.5 mΩ (Typ.), VGS = 10V, ID = 50A
Qg(tot) - Total Gate Charge115 nC (Typ.)
Package TypeTO-252

Key Features

  • Low on-resistance (rDS(ON)) of 13.5 mΩ at VGS = 10V and ID = 50A, ensuring minimal power loss during operation.
  • High continuous drain current (Id) of 50 A, making it suitable for high-power applications.
  • Drain-source breakdown voltage (Vds) of 60 V, providing robust protection against voltage spikes.
  • Dual-protected with temperature and current limit features, enhancing device reliability and safety.
  • TO-252 package, offering a compact and efficient form factor for various design needs.

Applications

The FDD13AN06A0-F085 MOSFET is versatile and can be used in a wide range of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial control systems, including power inverters and switch-mode power supplies.
  • Consumer electronics, such as power management in laptops and other portable devices.

Q & A

  1. What is the drain-source breakdown voltage of the FDD13AN06A0-F085?
    The drain-source breakdown voltage (Vds) is 60 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (Id) is 50 A.
  3. What is the typical on-resistance of the FDD13AN06A0-F085?
    The typical on-resistance (rDS(ON)) is 13.5 mΩ at VGS = 10V and ID = 50A.
  4. What package type is the FDD13AN06A0-F085 available in?
    The FDD13AN06A0-F085 is available in the TO-252 package.
  5. Does the FDD13AN06A0-F085 have any built-in protection features?
    Yes, it is dual-protected with temperature and current limit features.
  6. What are some common applications for the FDD13AN06A0-F085?
    Common applications include power supplies, motor control systems, automotive systems, industrial control systems, and consumer electronics.
  7. What is the total gate charge (Qg(tot)) of the FDD13AN06A0-F085?
    The total gate charge (Qg(tot)) is typically 115 nC.
  8. Is the FDD13AN06A0-F085 RoHS compliant?
    Yes, the FDD13AN06A0-F085 is RoHS compliant.
  9. Where can I find detailed specifications and datasheets for the FDD13AN06A0-F085?
    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Mouser Electronics.
  10. What are the benefits of using the FDD13AN06A0-F085 in power management applications?
    The benefits include low on-resistance, high current handling, and built-in protection features, which enhance efficiency and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9.9A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD13AN06A0-F085 FDD10AN06A0-F085
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 50A (Tc) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 50A, 10V 10.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 1840 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 115W (Tc) 135W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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